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The charge generation layer incorporating two p-doped hole transport layers for improving the performance of tandem organic light emitting diodes

Published online by Cambridge University Press:  20 August 2014

Dashan Qin ,
Mingxia Wang ,
Yuhuan Chen ,
Lei Chen ,
Guifang Li  and
Wenbo Wang
Dashan Qin*
Affiliation:
Institute of Polymer Science and Engineering, School of Chemical Engineering, Hebei University of Technology, Tianjin 300130, P.R. China
Mingxia Wang
Affiliation:
Institute of Polymer Science and Engineering, School of Chemical Engineering, Hebei University of Technology, Tianjin 300130, P.R. China
Yuhuan Chen
Affiliation:
Institute of Polymer Science and Engineering, School of Chemical Engineering, Hebei University of Technology, Tianjin 300130, P.R. China
Lei Chen
Affiliation:
Institute of Polymer Science and Engineering, School of Chemical Engineering, Hebei University of Technology, Tianjin 300130, P.R. China
Guifang Li
Affiliation:
Institute of Polymer Science and Engineering, School of Chemical Engineering, Hebei University of Technology, Tianjin 300130, P.R. China
Wenbo Wang
Affiliation:
Institute of Polymer Science and Engineering, School of Chemical Engineering, Hebei University of Technology, Tianjin 300130, P.R. China
*
a e-mail: qindashan06@aliyun.com
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Abstract

We report the charge generation layer (CGL) structure comprising of Li2CO3 doped bathocuproine (BCP:Li2CO3)/MoO3 doped 4,4-N,N-bis [N-1-naphthyl-N-phenyl-amino]biphenyl (NPB:MoO3)/MoO3 doped 4,4′-N,N′-dicarbazole-biphenyl (CBP:MoO3) for tandem organic light emitting diodes (TOLEDs). Compared to the TOLED using the conventional CGL structure of BCP:Li2CO3/20 nm CBP:MoO3, the one using the CGL structure of BCP:Li2CO3/5 nm NPB:MoO3/15 nm CBP:MoO3 showed increased electrical and luminous properties, mostly because the introduction of the higher-conductivity NPB:MoO3 relative to CBP:MoO3 could improve the current conduction in the CGL structure. Whereas, the performance of the CGL structure of BCP:Li2CO3/x nm NPB:MoO3/20- x nm CBP:MoO3 decreased with x increasing, mostly due to the fact that the CBP:MoO3 became depleted of mobile holes upon contacting p-doped NPB: the smaller thickness of CBP:MoO3, the worse conductivity for it. We provide some in-depth insights on designing the high-performance CGLs for TOLEDs.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 67 , Issue 3 , August 2014 , 30201
Copyright
© EDP Sciences, 2014

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