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Characterization and optimization of ion implantation for high spatial resolution quantum well intermixing in GaAs/AlGaAs superlattices

Published online by Cambridge University Press:  01 April 2014

Usman Younis ,
Barry M. Holmes  and
David C. Hutchings
Usman Younis*
Affiliation:
Department of Electrical Engineering, School of Electrical Engineering and Computer Science, National University of Sciences and Technology, H-12, 44000 Islamabad, Pakistan
Barry M. Holmes
Affiliation:
School of Engineering, University of Glasgow, Oakfield Avenue, Glasgow, G12 8QQ, UK
David C. Hutchings
Affiliation:
School of Engineering, University of Glasgow, Oakfield Avenue, Glasgow, G12 8QQ, UK
*
ae-mail: usman.younis@seecs.edu.pk
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Abstract

Processes to achieve high spatial resolution ion implantation induced quantum well intermixing in GaAs/AlGaAs superlattices have been developed. Ion implantation has been carried out using various doses of 4 MeV As2+ ion beam, followed by rapid thermal annealing at various temperatures for 60 s. Low temperature photoluminescence measurements reveal a blue-shift up to 90 nm in the energy band-gap. Propagation losses have been characterized in the intermixed waveguides, and losses as low as 0.55 cm−1 have been observed for 0.5 × 1013 cm−2 implantation dose which gives a blue-shift of 68 nm when annealed at 775 °C. The spatial resolution of ~1.2 μm has been observed at the depth of 2 μm inside the epitaxial structure.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 66 , Issue 1 , April 2014 , 10101
Copyright
© EDP Sciences, 2014

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