Anomalous electrical properties of dislocation slip plane in Si

V. G. Eremenko; E. B. Yakimov

doi:10.1051/epjap:2004149

Abstract

The anomalous bright contrast in the specimens containing dense dislocation slip planes, swept by moving dislocations was analysed. It is shown that the bright EBIC contrast outside the Schottky barrier is related to electrical activity of the extended defects generated in the slip plane by moving dislocations and thus, the slip plane acts as extended barrier separating excess carriers.

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Anomalous electrical properties of dislocation slip plane in Si

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Anomalous electrical properties of dislocation slip plane in Si

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