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Anomalous capacitance change in low-temperature grown ZnO thin-film transistors

Published online by Cambridge University Press:  17 September 2010

O. Seo ,
H. Kim  and
J. Jo
O. Seo
Affiliation:
Department of Electrical and Computer Engineering, Ajou University, Suwon, 443-749, Korea
H. Kim
Affiliation:
Department of Electrical and Computer Engineering, Ajou University, Suwon, 443-749, Korea
J. Jo*
Affiliation:
Department of Electrical and Computer Engineering, Ajou University, Suwon, 443-749, Korea
*
jungyol@ajou.ac.kr
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Abstract

We studied capacitance-voltage characteristics of ZnO thin-film transistors (TFT's), grown by metalorganic chemical vapor deposition (MOCVD). We compared two ZnO TFT's: one grown at 450 °C and the other at 350 °C. ZnO grown at 450 °C showed smooth capacitance profile with electron density of 1.5×1020 cm-3. In contrast, ZnO grown at 350 °C showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the SiO2 interface. Current-voltage and capacitance-voltage data support that our ZnO films have anisotropic conductivity.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 52 , Issue 1 , October 2010 , 10501
Copyright
© EDP Sciences, 2010

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