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Analytical description of mirror plot in insulating target

Published online by Cambridge University Press:  15 November 2006

N. Ghorbel*
Affiliation:
LaMaCop, Faculté des sciences de Sfax, Route Soukra Km 3, BP 802, CP 3038 Sfax, Tunisia
A. Kallel
Affiliation:
LaMaCop, Faculté des sciences de Sfax, Route Soukra Km 3, BP 802, CP 3038 Sfax, Tunisia
G. Damamme
Affiliation:
CEA, Direction des applications Militaires, Bât. DAM, BP 12, 91680 Bruyères-Le-Châtel, France
R. Renoud
Affiliation:
IREENA (EA 1770), Université de Nantes – Nantes Atlantique University, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cedex 3, France
Z. Fakhfakh
Affiliation:
LaMaCop, Faculté des sciences de Sfax, Route Soukra Km 3, BP 802, CP 3038 Sfax, Tunisia
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Abstract

A method has been developed to link the geometry of the trapped charge distribution within irradiated insulators to the mirror plot shape, in a scanning electron microscope. We give a detailed analysis of the geometrical optic approximation which is used to evaluate the mirror image formation. We establish then analytical mirror relations obtained for diverse trapped charge distributions such as homoïdal charge distribution, bipunctual and cylindrical ones. Knowledge of the charge distribution first moments enables us to investigate then their effect on the first terms of the mirror expression limited development. Finally, we apply these analytical expressions to evaluate certain characteristics of the charge distribution from an experimental mirror plot.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2006

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