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All the physical and electrical parametersof the MOS transistor on a single graph (QΨ)*

Published online by Cambridge University Press:  14 December 2005

G. Vincent
G. Vincent*
Affiliation:
Département de Physique, Université Joseph Fourier, Grenoble, France Laboratoire de Technologie de la Microélectronique, 17 avenue des Martyrs, 38054 Grenoble 9, France
*
gilbert.belledonne@wanadoo.fr
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Abstract

A single and simple graph is proposed, to visualize the impact of all the numerous parameters playing a role in the metal-oxide-semiconductor (MOS) transistor characteristics: doping and permittivity of the semiconductor, thickness, permittivity and charge of the oxide, temperature, and finally gate, drain and substrate voltages. In addition, MOS structure and capacitance properties are presented.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 32 , Issue 3 , December 2005 , pp. 155 - 158
Copyright
© EDP Sciences, 2005

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Footnotes

*

This paper is a resume of a lesson (in French) for Electrical Engineering Master's students. The complete text can be found at: http://perso.wanadoo.fr/physique.belledonne/. A simplified version of this paper has been published at: 8es journées pédagogiques, CNFM, 2004 dec. 1, edited by O. Bonnaud, H. Lhermite, CCMO, Université de Rennes 1, France.

References

A.S. Grove, Physics and technology of semiconductor devices (Wiley, NY, 1967)
S.M. Sze, Physics of semiconductor devices (Wiley, NY, 1981)