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Selective growth and optical properties of sputtered BaTiO3 films

Published online by Cambridge University Press:  15 March 2000

A. Dazzi ,
A. Gueldry ,
M. Maglione ,
P. Sibillot ,
P. Mathey  and
P. Jullien
A. Dazzi
Affiliation:
Laboratoire de Physique, Université de Bourgogne (UMR 5027 du CNRS), bâtiment Mirande, B.P. 47870, 21078 Dijon Cedex, France
A. Gueldry
Affiliation:
Laboratoire de Physique, Université de Bourgogne (UMR 5027 du CNRS), bâtiment Mirande, B.P. 47870, 21078 Dijon Cedex, France
M. Maglione*
Affiliation:
Laboratoire de Physique, Université de Bourgogne (UMR 5027 du CNRS), bâtiment Mirande, B.P. 47870, 21078 Dijon Cedex, France
P. Sibillot
Affiliation:
Laboratoire de Physique, Université de Bourgogne (UMR 5027 du CNRS), bâtiment Mirande, B.P. 47870, 21078 Dijon Cedex, France
P. Mathey
Affiliation:
Laboratoire de Physique, Université de Bourgogne (UMR 5027 du CNRS), bâtiment Mirande, B.P. 47870, 21078 Dijon Cedex, France
P. Jullien
Affiliation:
Laboratoire de Physique, Université de Bourgogne (UMR 5027 du CNRS), bâtiment Mirande, B.P. 47870, 21078 Dijon Cedex, France
*
maglione@u-bourgogne.fr
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Abstract

we report the growth of BaTiO3 thin films by standard Radio Frequency sputtering. Without any in situ or post annealing, these polycristalline films are oriented relative to the substrate even when it is amorphous. We show that this preferential orientation may be monitored using a DC Bias during the film growth. At room temperature, cubic films of (100) and (110) orientations have been achieved, on fused silica substrate. Some optical waveguiding properties of these films have been studied. The resulting film index is 2.26 and the optical step index at the substrate interface is sharp. This allows the use of standard RF sputtering techniques to monitor oriented BaTiO3 films for linear optical applications.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 9 , Issue 3 , March 2000 , pp. 181 - 185
Copyright
© EDP Sciences, 2000

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