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Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder

Published online by Cambridge University Press:  23 October 2014

Wilfried Desrat
Affiliation:
Université Montpellier 2 and CNRS, Laboratoire Charles Coulomb UMR 5221, 34095 Montpellier, France
Magdalena Chmielowska
Affiliation:
CRHEA-CNRS UPR 10, rue B. Grégory, Parc de Sophia Antipolis, 06560 Valbonne, France
Sébastien Chenot
Affiliation:
CRHEA-CNRS UPR 10, rue B. Grégory, Parc de Sophia Antipolis, 06560 Valbonne, France
Yvon Cordier
Affiliation:
CRHEA-CNRS UPR 10, rue B. Grégory, Parc de Sophia Antipolis, 06560 Valbonne, France
Benoît Jouault
Affiliation:
Université Montpellier 2 and CNRS, Laboratoire Charles Coulomb UMR 5221, 34095 Montpellier, France
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Abstract

We present magnetotransport measurements on a high electron density AlGaN/GaN heterostructure with two subbands populated at T = 1.6 K. The transport scattering times, τtr, of each subband are first derived at low magnetic field by taking into account the magneto-intersubband scattering term. Then the quantum scattering times, τq, are extracted from independent Dingle plots, obtained at higher magnetic fields. All scattering times are studied as a function of the total electronic density, increased by the persistent photo-conductivity effect. A standard modelization, based on all common scattering mechanisms, reveals that the transport scattering time is governed by the short-range AlGaN/GaN interface roughness (IR) scattering, whereas the quantum scattering time is due to the smooth potential induced by remote ionized impurities (II) at the GaN surface. This intermediate situation of mixed disorder, where the τtr/τq ratio is greater than one, does not indicate that the mobility is limited by Coulomb scattering. It is due to the unusual condition, τtrIIτtrIRτqII $ {\tau }_{\mathrm{t}r}^{\mathrm{II}}\gg {\tau }_{\mathrm{t}r}^{\mathrm{IR}}\gg {\tau }_{\mathrm{q}}^{\mathrm{II}}$ .

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Research Article
Copyright
© EDP Sciences, 2014

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Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder
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