Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-19T13:36:40.738Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron irradiation effect on thermal donors in CZ-Si

Published online by Cambridge University Press:  15 July 2004

K. Takakura ,
H. Ohyama ,
H. Murakawa ,
T. Yoshida ,
J. M. Rafí ,
R. Job ,
A. Ulyashin ,
E. Simoen  and
C. Claeys
K. Takakura*
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
H. Ohyama
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
H. Murakawa
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
T. Yoshida
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
J. M. Rafí
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
R. Job
Affiliation:
University of Hagen, Haldener Str. 182, PO Box 940, D-58084 Hagen, Germany
A. Ulyashin
Affiliation:
University of Hagen, Haldener Str. 182, PO Box 940, D-58084 Hagen, Germany
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium E. E. Dept, K. U. Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
*
takakura@ee.knct.ac.jp
Get access

Abstract

Electrical properties of the shallow thermal donors (TDs) in n-type CZ-Si diodes by the electron irradiation were investigated. After the electron irradiation, carrier concentration was decreased. From deep level transient spectroscopy (DLTS) measurements, some peaks related to TDs and vacancy-oxygen complexes were observed for the irradiated samples. The peak related to V-O and/or A-center at EC-0.18 eV increased with the electron fluence. To compare that, the level of EC-0.09 eV related to TDs was independent of electron fluence. In addition to that, reverse current of the diodes was increased with increasing irradiated electron fluence.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 133 - 135
Copyright
© EDP Sciences, 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Johnson, N. M., Hahn, S. K., Appl. Phys. Lett. 48, 709 (1986) CrossRef
Chantre, A., Pearton, S. J., Kimerling, L. C., Cummings, K. D., Dautremont-Smith, W. C., Appl. Phys. Lett. 50, 513 (1987) CrossRef
Ulyasin, A., Job, R., Fahrner, W. R., Grambole, D., Herrmann, F., Solid State Phenom. 82–84, 315 (2002) CrossRef
Rafǐ, J. M., Simoen, E., Claeys, C., Ulyashin, A. G., Job, R., Fahrner, W. R., Versluys, J., Clauws, P., Lozano, M., Campabadal, F., in Proc. ALTECH 2003 , edited by B. O. Kolbesen, C. Claeys, P. Stallhofer, F. Tardif, T. Shaffner, J. Electrochem. Soc. Ser. PV 2003-03, 96 (2003)
Benton, J. L., Kimerling, L. C., Stavola, M, Physica B 116, 210 (1995)
Simoen, E., Claeys, C., Job, R., Ulyashin, A. G., Fahrner, W. R., Tonelli, G., De Gryse, O., Clauws, P., J. Electrochem. Soc. 150, G520 (2003) CrossRef