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X-ray diffraction and photoluminescence studies of zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering

Published online by Cambridge University Press:  06 March 2012

G. Juárez-Díaz ,
H. Solache-Carranco ,
G. Romero-Paredes R. ,
R. Peña-Sierra ,
J. Martínez-Juárez ,
R. Galeazzi ,
A. Esparza-García ,
M. Briseño-García  and
J. A. Henao
G. Juárez-Díaz
Affiliation:
Depto. de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido (SEES), Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), Apartado Postal 14-740, 07000 Ciudad de México, Distrito Federal, México
H. Solache-Carranco
Affiliation:
Depto. de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido (SEES), Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), Apartado Postal 14-740, 07000 Ciudad de México, Distrito Federal, México
G. Romero-Paredes R.
Affiliation:
Depto. de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido (SEES), Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), Apartado Postal 14-740, 07000 Ciudad de México, Distrito Federal, México
R. Peña-Sierra
Affiliation:
Depto. de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido (SEES), Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), Apartado Postal 14-740, 07000 Ciudad de México, Distrito Federal, México
J. Martínez-Juárez
Affiliation:
Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria, 14 Sur y Av. San Claudio, 72570 Puebla, Puebla, Mexico
R. Galeazzi
Affiliation:
Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria, 14 Sur y Av. San Claudio, 72570 Puebla, Puebla, Mexico
A. Esparza-García
Affiliation:
Centro de Ciencias Aplicadas y Desarrollo de Tecnología-UNAM, Ciudad Universitaria, Apartado Postal 04510, Ciudad de México, Distrito Federal, México
M. Briseño-García
Affiliation:
Centro de Ciencias Aplicadas y Desarrollo de Tecnología-UNAM, Ciudad Universitaria, Apartado Postal 04510, Ciudad de México, Distrito Federal, México
J. A. Henao
Affiliation:
Grupo de Investigación en Química Estructural (GIQUE), Escuela de Química, Universidad Industrial, de Santander (UIS), Apartado Aéreo 678, Bucaramanga, Colombia
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Abstract

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.

Keywords

ZnOpolycrystalline filmssputteringX-ray diffractionphotoluminescence
Type
Technical Articles
Information
Powder Diffraction , Volume 23 , Special Issue S1 , March 2008 , pp. S94 - S97
Copyright
Copyright © Cambridge University Press 2008

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