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Symposium I – Nanoscale Heat Transfer–Thermoelectrics, Thermophotovoltaics and Emerging Thermal Devices

K. Nielsch, S.F. Fischer, B.J.H. Stadler, T. Kamins

Volume 1329 - 2011

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Research Article

Ordered Si-Ge nanostructures by glancing angle deposition via ion beam sputtering
Jens Bauer, Michael Weise, Chinmay Khare, Bernd Rauschenbach
Published online by Cambridge University Press:

13 September 2011, mrss11-1329-i01-01
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Glancing angle deposition (GLAD) was used to deposit ordered arrangements of Si/Ge-nanocolumns applying the ion beam sputter technique. After substrate preparation by electron beam lithography as well as nanosphere lithography the deposition behavior of GLAD nanocolumns in regular arrangements with different symmetries was studied. The nanocolumns exhibited distinct morphology regions which are correlated to their temporal evolution during deposition. Furthermore, the customization of the column morphology by non-uniform substrate rotation is considered. Axial Si/Ge-heterojunctions were incorporated by sequential deposition.

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Symposium I – Nanoscale Heat Transfer–Thermoelectrics, Thermophotovoltaics and Emerging Thermal Devices

Research Article

Ordered Si-Ge nanostructures by glancing angle deposition via ion beam sputtering

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Symposium I – Nanoscale Heat Transfer–Thermoelectrics, Thermophotovoltaics and Emerging Thermal Devices

Research Article

Ordered Si-Ge nanostructures by glancing angle deposition via ion beam sputtering