Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency
Research Article
GaN Materials for High Power Microwave Amplifiers
- Published online by Cambridge University Press: 10 February 2011, 3
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Double Channel AlGaN/GaN Heterostructure Field Effect Transistor
- Published online by Cambridge University Press: 10 February 2011, 9
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Temperature Dependence of Breakdown Field in p-π-n GaN Diodes
- Published online by Cambridge University Press: 10 February 2011, 15
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Low Frequency Noise In n-Type Gallium Nitride
- Published online by Cambridge University Press: 10 February 2011, 21
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Nitride Based High Power Devices: Transport Properties, Linear Defects And Goals
- Published online by Cambridge University Press: 10 February 2011, 27
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Growth of AlN Single Crystals
- Published online by Cambridge University Press: 10 February 2011, 35
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A New Approach to Growth of Bulk Zno Crystals for Wide Bandgap Applications
- Published online by Cambridge University Press: 10 February 2011, 41
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Gan Nucleation Mechanism on A Surface Template of Oxidized AIAs
- Published online by Cambridge University Press: 10 February 2011, 47
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Flow Modulation Epitaxial Lateral Overgrowth Of Gallium Nitride On Masked 6H-Silicon Carbide And Sapphire Surfaces
- Published online by Cambridge University Press: 10 February 2011, 59
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Two-Step Growth of Gan Quantum Dots with Metalorganic Chemical Vapor Deposition
- Published online by Cambridge University Press: 10 February 2011, 65
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Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3
- Published online by Cambridge University Press: 10 February 2011, 69
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MOCVD Growth of Gan on Silicon and Related Surfaces
- Published online by Cambridge University Press: 10 February 2011, 75
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High Voltage Silicon Carbide Devices
- Published online by Cambridge University Press: 10 February 2011, 77
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A Theoretical and Empirical Perspective of SiC Bulk Growth
- Published online by Cambridge University Press: 10 February 2011, 89
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The Response of High Voltage 4H-SiC P-N Junction Diodes to Different Edge Termination Techniques
- Published online by Cambridge University Press: 10 February 2011, 101
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Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications
- Published online by Cambridge University Press: 10 February 2011, 107
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The Origin of Nanopipes and Micropipes in Non-Cubic GaN and SiC
- Published online by Cambridge University Press: 10 February 2011, 113
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5.5 kV Bipolar Diodes From High Quality CVD 411-SiC
- Published online by Cambridge University Press: 10 February 2011, 119
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High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC
- Published online by Cambridge University Press: 10 February 2011, 125
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Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density
- Published online by Cambridge University Press: 10 February 2011, 131
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