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High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC

Published online by Cambridge University Press:  10 February 2011

C.-M. Zetterling ,
M. östling ,
L. Norin  and
U. Jansson
C.-M. Zetterling
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, Box 229, S-164 40 Kista, Sweden
M. östling
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, Box 229, S-164 40 Kista, Sweden
L. Norin
Affiliation:
Uppsala University, Ångström Laboratory, Dept. of Inorganic Chemistry, Uppsala, Sweden
U. Jansson
Affiliation:
Uppsala University, Ångström Laboratory, Dept. of Inorganic Chemistry, Uppsala, Sweden
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Abstract

Epitaxial titanium carbide is investigated as a low resistivity, high temperature stable Ohmic and Schottky contact to 4H and 6H SiC. The titanium carbide films were deposited at 500°C using co-evaporation of titanium (e-beam) and C60 (Knudsen cell) in a UHV system. Schottky diodes and TLM structures were fabricated on low and high doped SiC material respectively. The samples were annealed at 700 °C in a vacuum furnace, and electrical measurements were performed up to 300 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 125
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Pensl, G., Morkoc, H., Monemar, B. and Janzén, E., eds. Silicon Carbide, III-Nitrides and Related Materials, Materials Science Forum, 264–268 (Trans Tech Publications Ltd., Switzerland, 1998)Google Scholar
2. Maex, K. and van Rossum, M., eds. Properties of Metal Silicides, Emis Datareviews series, 14 (INSPEC, the Institution of Electrical Engineers, London, 1995)Google Scholar
3. Porter, L.M. and Davis, R.F., Mat. Sci. Eng. B 34, p. 83 (1995).Google Scholar
4. Lundberg, N., Östling, M., Tägtström, P. and Jansson, U., J. Electrochem. Soc. 143, p. 1662 (1996).Google Scholar
5. Lundberg, N., Tägtsträm, P., Jansson, U. and Ostling, M., presented at ECSCRM'96, Crete, Greece (1996).Google Scholar
6. Porter, L.M., Davis, R.F., Bow, J.S., Kim, M.J., Carpenter, R.W. and Glass, R.C., J. Mater. Res. 10, p. 668 (1995).Google Scholar
7. Waldrop, J.R. and Grant, R.W., Appl. Phys. Lett. 62, p. 2685 (1993).Google Scholar
8. Rudy, E., Compendium of Phase Diagram Data, Part V (Air Force Materials Lab., Wright- Patterson, AFB, Ohio, 1969).Google Scholar
9. Chaddha, A.K., Parsons, J.D. and Kruaval, G.B., Appl. Phys. Lett. 66, p. 760 (1995).Google Scholar
10. Zhao, Q.H., Parsons, J.D., Chen, H.S., Chaddha, A.K., Wu, J., Kruaval, G.B. and Downham, D., Mater. Res. Bull. 30, p. 761 (1995).Google Scholar
11. Norin, L., McGinnis, S., Jansson, U. and Carlsson, J.-O., J. Vac. Sci. Technol. A 15, p. 3082 (1997).Google Scholar
12. Nordell, N., Schbner, A. and Andersson, S.G., J. Electrochem. Soc. 143, p. 2910 (1996).Google Scholar
13. Berger, H.H., Solid-State Electronics 15, p. 145 (1972).Google Scholar
14. Norin, L., Lu, J., Jansson, U. and Malm, J.-O., to be published (1998).Google Scholar
15. Storms, E.K., MTP International Review of Science, Inorganic Chemistry Series One, ed. Roberts, L.E.J. (Butterworths, London, Vol.10, 1972).Google Scholar