Symposium A – Materials Modificaton and Synthesis by Ion Beam…
Research Article
Annealing Properties of Defects in BF2+ Implanted Silicon
-
- Published online by Cambridge University Press:
- 03 September 2012, 137
-
- Article
- Export citation
Raman Spectroscopy of Ion-Implanted Silicon
-
- Published online by Cambridge University Press:
- 03 September 2012, 143
-
- Article
- Export citation
Mask-Edge Distributions Produced by 80 keV As+ Ion Implantation into Si
-
- Published online by Cambridge University Press:
- 03 September 2012, 149
-
- Article
- Export citation
Secondary Defect Formation and Gettering in MeV Self-Implanted Silicon
-
- Published online by Cambridge University Press:
- 03 September 2012, 155
-
- Article
- Export citation
X-Ray Photoelectron Spectroscopy Investigation of the Interaction of NF3 with Silicon
-
- Published online by Cambridge University Press:
- 03 September 2012, 161
-
- Article
- Export citation
Ion Beam Modification of Cluster-Covered Silicon Surfaces
-
- Published online by Cambridge University Press:
- 03 September 2012, 167
-
- Article
- Export citation
Ion Beam Induced Epitaxial Regrowth and Interfacial Amorphization of Compound Semiconductors
-
- Published online by Cambridge University Press:
- 03 September 2012, 175
-
- Article
- Export citation
Characterization of Laterally Selected Si Doped Layer Formed in GaAs Using a Low-Energy FIB-MBE Combined System
-
- Published online by Cambridge University Press:
- 03 September 2012, 187
-
- Article
- Export citation
Elevated Temperature Implantation of GaAs with Si Ions.
-
- Published online by Cambridge University Press:
- 03 September 2012, 193
-
- Article
- Export citation
Amorphization Mechanisms in AlxGa1-xAs
-
- Published online by Cambridge University Press:
- 03 September 2012, 199
-
- Article
- Export citation
Electron Beam Enhanced Precipitation in Highly Carbon Doped GaAs Layers
-
- Published online by Cambridge University Press:
- 03 September 2012, 205
-
- Article
- Export citation
Fabrication of Multi-Level Buried Oxide Layers by Oxygen-Ion-Implantation into Si/Ge multilayers
-
- Published online by Cambridge University Press:
- 03 September 2012, 211
-
- Article
- Export citation
The Fabrication of High-Speed Electronic Devices by Ion-Beam Synthesis of GexSi1-x Strained Layers
-
- Published online by Cambridge University Press:
- 03 September 2012, 217
-
- Article
- Export citation
Germanium Redistribution Phenomena in the Synthesis of SiGe Layers
-
- Published online by Cambridge University Press:
- 03 September 2012, 223
-
- Article
- Export citation
Interaction of Cavities and Dislocations in Semiconductors
-
- Published online by Cambridge University Press:
- 03 September 2012, 229
-
- Article
- Export citation
Vacancy-Type Defects in Electron and Proton Irradiated II- VI Compounds
-
- Published online by Cambridge University Press:
- 03 September 2012, 235
-
- Article
- Export citation
Ion Implantation and Annealing Effects in Silicon Carbide
-
- Published online by Cambridge University Press:
- 03 September 2012, 241
-
- Article
- Export citation
Effects of Ion Bombardment on Chemical Interactions at SiC Surface and AI/SiC Interfaces
-
- Published online by Cambridge University Press:
- 03 September 2012, 253
-
- Article
- Export citation
Growth of Patterned SiC by Ion Modification and Annealing of C60 Films on Silicon
-
- Published online by Cambridge University Press:
- 03 September 2012, 259
-
- Article
- Export citation
Formation of a Buried Soft Layer in Sic for ”Compliant Substrate” by Ion Implantation
-
- Published online by Cambridge University Press:
- 03 September 2012, 265
-
- Article
- Export citation