Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-21T23:04:53.428Z Has data issue: false hasContentIssue false
  • English
  • Français

ZNSE/III–V Heterostructures Grown in a Multichamber MBE System

Published online by Cambridge University Press:  26 February 2011

M. C. Tamargo ,
J. L. de Miguel ,
D. M. Hwang ,
B. J. Skromme ,
M. H. Meynadier ,
R. E. Nahory  and
H. H. Farrell
M. C. Tamargo
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
J. L. de Miguel
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
D. M. Hwang
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
B. J. Skromme
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
M. H. Meynadier
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
R. E. Nahory
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
H. H. Farrell
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
Get access

Abstract

We have grown ZnSe epitaxial layers on bulk GaAs substrates and on GaAs epitaxial layers, with both As-rich and Ga-rich surface terminations. We have also grown ZnSe on AlAs epitaxial surfaces with different As to Al ratios. In all cases, abrupt, layer-by-layer growth is observed on the As-rich surfaces, while 3-dimensional nucleation is observed on the group III-rich surfaces. GaAs was also grown on ZnSe layers. In this case, microtwins form at the interface whose density diminishes as the layer is made thicker. A growth model is proposed consistent with these results which requires over-all electronic balance at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 125
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Tamargo, M. C., de Miguel, J. L., Hwang, D. M. and Farrell, H. H., J. Vac. Sci. Technol. B, Mar.-Apr. (1988).Google Scholar
2.Massies, J., Etienne, P., Dezaly, F. and Linh, N. T., Surf. Sci. 99, 121 (1980).Google Scholar
3.de Miguel, J. L., Tamargo, M. C., unpublished.Google Scholar
4.Farrell, H. H., Tamargo, M. C., de Miguel, J. L., J. Vac. Sci. Technol. B, Mar.–Apr. (1988).Google Scholar
5.Harrison, W. A., Kraut, E. A., Waldrop, J. R. and Grant, R. W., Phys. Rev. B 18, 4402 (1978).Google Scholar
6.Tu, D.-W. and Kahn, A., J. Vac Sci. Technol. A 3, 922 (1985).Google Scholar