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ZnO/AlGaN ultraviolet light emitting diodes.

Published online by Cambridge University Press:  01 February 2011

D. M. Bagnall ,
Ya. I. Alivov ,
E. V. Kalinina ,
D. C. Look ,
B. M. Ataev ,
M. V. Chukichev ,
A. E. Cherenkov  and
A. K. Omaev
D. M. Bagnall
Affiliation:
Electronics and Computer Science, University of Southampton, UK
Ya. I. Alivov
Affiliation:
Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow dist., 142432 Russia
E. V. Kalinina
Affiliation:
A.F. Ioffe Physico-Technical Institute, RAS, St. Peterburg, Russia
D. C. Look
Affiliation:
Semiconductor Research Center, Wright State University, Dayton, Ohio 45435, U.S.A.
B. M. Ataev
Affiliation:
Institute of Physics, Daghestan Scientific Centre of RAS, Makhachkala, 367003 Russia
M. V. Chukichev
Affiliation:
Department of Physics, M.V. Lomonosov Moscow State University, Moscow, Russia
A. E. Cherenkov
Affiliation:
A.F. Ioffe Physico-Technical Institute, RAS, St. Peterburg, Russia
A. K. Omaev
Affiliation:
Institute of Physics, Daghestan Scientific Centre of RAS, Makhachkala, 367003 Russia
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Abstract

Ga doped n-type ZnO layers are grown using plasma assisted chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers grown by hydride vapor phase epitaxy to form n-ZnO/p-AlGaN heterojunction light emitting diodes. I-V characteristics clearly show rectifying behavior with a threshold voltage of ∼3.2 V and intense ultraviolet electroluminescence with peak emission at 390 nm. The dominant emission mechanism is found to result from hole injection from the p-type AlGaN into the n-type ZnO. Significant emission up to 500 K is observed indicating possible applications in harsh environments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y3.9
Copyright
Copyright © Materials Research Society 2004

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References

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