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Zinc Bis(Amide) Compounds Evaluated as Designed Precursors for Site-Selective P-type Doping of ZnSe

Published online by Cambridge University Press:  10 February 2011

David A. Gaul ,
Oliver Just  and
William S. Rees Jr.
David A. Gaul
Affiliation:
School of Chemistry and Biochemistry, School of Materials Science and Engineering, and Molecular Design Institute, Georgia Institute of Technology, Atlanta, Ga 30332–0400.
Oliver Just
Affiliation:
School of Chemistry and Biochemistry, School of Materials Science and Engineering, and Molecular Design Institute, Georgia Institute of Technology, Atlanta, Ga 30332–0400.
William S. Rees Jr.
Affiliation:
School of Chemistry and Biochemistry, School of Materials Science and Engineering, and Molecular Design Institute, Georgia Institute of Technology, Atlanta, Ga 30332–0400.
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Abstract

Zinc selenide doped with nitrogen deposited by organometallic vapor phase epitaxy (OMVPE) is one example which leads to a material that produces a blue emission. However, the effective incorporation of the nitrogen dopant into the zinc selenide lattice has not yet resulted in the demanded efficiency. One potential solution involves the design of a precursor introducing the nitrogen dopant bonded to zinc that survives the thermal decomposition process. Several new zinc bis(amide) compounds with the general formula Zn[N(R)(R′)]2 have been synthesized. Investigations into the thermal decomposition mechanisms of these compounds have provided insight into the potential usefulness of the designed precursor in the preparation of ZnSe:N.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 415: Symposium BB – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II , 1995 , 117
Copyright
Copyright © Materials Research Society 1996

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References

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