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Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

Published online by Cambridge University Press:  01 February 2011

Seungwon Lee  and
Paul von Allmen
Seungwon Lee
Affiliation:
Seungwon.Lee@jpl.nasa.gov, Jet Propulsion Laboratory, High Capability Computing and Modeling, 4800 Oak Grove Dr. M/S 169-315, Pasadena, CA, 91109, United States, 818-393-7720
Paul von Allmen
Affiliation:
Paul.vonAllmen@jpl.nasa.gov, Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, CA, 91109, United States
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Abstract

The electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

Keywords

nanostructureelectronic structureSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1017 , 2007 , 1017-DD08-23
Copyright
Copyright © Materials Research Society 2007

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