Hostname: page-component-76fb5796d-25wd4 Total loading time: 0 Render date: 2024-04-27T02:47:51.968Z Has data issue: false hasContentIssue false
  • English
  • Français

X-Ray Spectrometer with a Submicron X-Ray Beam for Ulsi Microanalysis

Published online by Cambridge University Press:  22 February 2011

Naoki Yamamoto ,
Yoshio Homma ,
Shinji Sakata  and
Yoshinori Hosokawa
Naoki Yamamoto
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Tokyo, Japan
Yoshio Homma
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Tokyo, Japan
Shinji Sakata
Affiliation:
Corporate Research & Development Promotion Office, Hitachi, Ltd., Tokyo, Japan
Yoshinori Hosokawa
Affiliation:
Research and Development Div., Horiba, Ltd., Kyoto, Japan
Get access

Abstract

A fluorescent and diffraction X-ray spectrometer with a 0.8 μmϕ Xray beam has been developed. It allows simultaneous measurement of local strains and minute amounts of metal contaminants in fine ULSI devices. The minimum sample size for X-ray diffraction measurement with it is a 0.3 μm diameter by 0.2 μm deep volume. It is applied to analyze strain in Al lines, showing that strain in Al single-layer lines (no barrier) increases significantly as the line width is reduced below 1.5 μm. Introducing barrier metals reduces this dependence of strain on line width. It is also found that hillock and void formation has a very strong correlation to strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 209
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cosslet, V. E. and Nixon, W. C., X-ray Microscopy, (Cambridge At The University Press, London, 1960), pp. 87–138.Google Scholar
2. Noyan, I. C. and Cohen, J. B., Residual Stress, (Springer-Verlag, New York, 1987), pp. 117–130.Google Scholar
3. Yamamoto, N. and Sakata, S., J. J. Appl. Phys., 28, L2065–L2068, 1989.Google Scholar
4. Dirks, A. G., Wolters, R. A. M., and Deirman, A. E. M., Mat. Ress. Soc. Symp. Proc., 260, pp. 787–792, 1992.Google Scholar
5. Park, M., Krause, S. J. and Wilson, S. R., Mat. Res. Soc. Symp. Proc., 260, pp. 799–804, 1992.Google Scholar