Hostname: page-component-7479d7b7d-wxhwt Total loading time: 0 Render date: 2024-07-12T02:25:11.214Z Has data issue: false hasContentIssue false

X-Ray Diffraction Study of Heteroepitaxy of MOCVD Grown TiO2 and VO2 Films on Sapphire Single Crystals

Published online by Cambridge University Press:  25 February 2011

Hoydoo You
Affiliation:
Material Science Division Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
H.L.M. Chang
Affiliation:
Material Science Division Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
R.P. Chiarello
Affiliation:
Material Science Division Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
D.J. Lam
Affiliation:
Material Science Division Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
Get access

Abstract

A four-circle diffractometry technique is used to determine the heteroepitaxial relations of VO2 and TiO2 thin films grown by an MOCVD technique on sapphire (0001) and (1120) surfaces. The use of a reflective geometry eliminates special sample preparation of the sample for the x-ray diffraction measurements. The distribution of epitaxial domains is found to depend strongly on the symmetry of the underlying substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

Work performed under DOE contract W-31-109-Eng-38

References

REFERENCES

[1] Goto, K.S., Solid State Electrochmistry and Its Applications to Sensors and Electronics Devices, Elsevier, New York, 1988.Google Scholar
[2] Mochrie, S.G.J., J. Appl. Cryst., 21, 1 (1988).Google Scholar
[3] Chang, H.L.M., You, H., Guo, J., and Lam, D.J., Appl. Surf. Science, Proceedings of the 5th Intl. Conf. on Solid Films and Surfaces, Brown University, Providence, RI, August 13–17, 1990, in press.Google Scholar
[4] McTague, J.P. and Novaco, A.D., Phys. Rev. 19, 5299 (1979); M.F. Toney, J,G. Gordon, M.G. Samant, G.L. Borges, O.R. Melroy, L.-S. Kau, d.G. Wiesler, D. Yee, and L.B. Sorensen, Phys. Rev. 42, 5594 (1990).CrossRefGoogle Scholar