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X-Ray and Raman Topographic Studies of Gaas Implanted With 28Si+ and Pulsed Laser Annealed

Published online by Cambridge University Press:  25 February 2011

R.C. Bowman ,
J.F. Knudsen ,
P.M. Adams ,
H.D. Yao  and
A.D. Compaan
R.C. Bowman
Affiliation:
The Aerospace Corporation, Laboratory Operations, Los Angeles, CA 90009
J.F. Knudsen
Affiliation:
The Aerospace Corporation, Laboratory Operations, Los Angeles, CA 90009
P.M. Adams
Affiliation:
The Aerospace Corporation, Laboratory Operations, Los Angeles, CA 90009
H.D. Yao
Affiliation:
University of Toledo, Dept. of Physics and Astronomy, Toledo, OH 43606
A.D. Compaan
Affiliation:
University of Toledo, Dept. of Physics and Astronomy, Toledo, OH 43606
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Abstract

Double-crystal x-ray diffraction and topography, along with Raman spectroscopy and topography are used to study lattice reconstruction and carrier activation for pulsed laser annealed Si implanted GaAs. Although lattice strain is essentially eliminated, along with the production of carrier concentrations to about 3×1019 cm.3 at the center of laser annealed spots, incomplete removal of implant induced disorder and little dopant activation are observed in surrounding areas. Correlations of Raman and x-ray topographs suggest that concentric regions of partial melting, but without epitaxial regrowth, occur in the periphery of the laser annealed spots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 727
Copyright
Copyright © Materials Research Society 1990

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References

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