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XPS Study of the Al/SiO2 Interface Viewed From the SiO2 Side

Published online by Cambridge University Press:  22 February 2011

M.H. Hecht ,
F.J. Grunthaner  and
J. Maserjian
M.H. Hecht
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology4800 Oak Grove Dr., Pasadena, CA 91109
F.J. Grunthaner
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology4800 Oak Grove Dr., Pasadena, CA 91109
J. Maserjian
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology4800 Oak Grove Dr., Pasadena, CA 91109
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Abstract

We report on the first non-destructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films. Both X-Ray Photoelectron Spictroscopy (XPS) and electrical measurements of unannealed, resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Post metallization annealing (PMA) at 450°C induces reduction of the SiO2 by the aluminum, resulting in the layer ordering SiO2/Al2O3/Si/Al. The XPS measurement is performed from the SiO2 side after the removal of the Si substrate after etching with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal-insulator and other interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 317
Copyright
Copyright © Materials Research Society 1984

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References

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