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Xps Studies of Chlorine Etching Interactions with GaAs(100)

Published online by Cambridge University Press:  21 February 2011

Andrew Freedman  and
C.D. Stinespring
Andrew Freedman
Affiliation:
Center for Chemical and Environmental Physics, Aerodyne Research, Inc., 45 Manning Road, Billerica, MA 01821
C.D. Stinespring
Affiliation:
Center for Chemical and Environmental Physics, Aerodyne Research, Inc., 45 Manning Road, Billerica, MA 01821
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Abstract

GaAs (100) substrates have been chlorinated with both atomic and molecular beams of chlorine under ultra high vacuum conditions. X-ray photoelectron spectra of the resulting samples indicate that at a substrate temperatures of 130 K, Cl atoms efficiently penetrate the GaAs lattice forming Ga and As chloride species. Exposure to Cl atoms at 173 K results in desorption of As, leaving GaClx species behind. Molecular chlorine reacts much less efficiently.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 389
Copyright
Copyright © Materials Research Society 1990

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References

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