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XPS, AES and Leed Studies of The Interaction Between The Si(100) 2×1 Surface and Cadmium Deposited at Room Temperature

Published online by Cambridge University Press:  15 February 2011

S. Santucci
Affiliation:
Dipartimento di Fisica, Universita' de L'Aquila, 67010 Coppito (AQ), Italy
S. Di Nardo
Affiliation:
Dipartimento di Fisica, Universita' de L'Aquila, 67010 Coppito (AQ), Italy
L. Lozzi
Affiliation:
Dipartimento di Fisica, Universita' de L'Aquila, 67010 Coppito (AQ), Italy
M. Passacantando
Affiliation:
Dipartimento di Fisica, Universita' de L'Aquila, 67010 Coppito (AQ), Italy
P. Picozzi
Affiliation:
Dipartimento di Fisica, Universita' de L'Aquila, 67010 Coppito (AQ), Italy
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Abstract

Very thin films of cadmium, with a mean thickness between 1 Å and 500 Å, were deposited by thermal evaporation in ultra-high-vacuum on a Si(100) 2×1 surface held at room temperature. In situ X-ray Photoelectron Spectroscopy and Auger Electron Spectroscopy were performed in order to investigate the interaction between the silicon substrate and the deposited cadmium. In samples with deposited mean thickness up to 3 Å, cadmium and silicon are found to be strongly interacting. In fact both XPS and AES spectra show evident changes in shape and energy position leading to the conclusion that a chemical compound between Cd and Si is formed. No diffusion between cadmium and silicon is observed, so the cadmium atoms deposited after the first 3 Å show a bulk character. The analysis of the first derivative intensity of the Si L23VV and Cd M5N45N45 Auger signals, varying the amount of deposited Cd, indicates the formation of islands in the early stage of the Cd growth. These islands show an amorphous structure as observed by using the LEED spectroscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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