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Xafs Study on Interfaces in III-V Semiconductor Heterostructures

Published online by Cambridge University Press:  25 February 2011

Kiyoshi Ogata ,
Kazufumisuenaga ,
Asao Nakano  and
Teruo Mozume
Kiyoshi Ogata
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd., Yokohama 244, Japan.
Kazufumisuenaga
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd., Yokohama 244, Japan.
Asao Nakano
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd., Yokohama 244, Japan.
Teruo Mozume
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185, Japan.
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Abstract

Interfaces in InGaAs/InP heterostructures were investigated by XAFS analysis using synchrotron radiation. Two types of InGaAs/InP heterostructures were made by MEE using Ga, In, AsH3 and PH3 as sources. These InGaAs layers were terminated by (a) InGa and (b) As. The local structures around P were investigated by fluorescent XAFS analysis. It shows that the nearest neighbor around P is Ga and In in the InGa (a) sample and mainly In in the As (b) sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 109
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Wang, T. Y. et al., Appl. Phys. Lett., 52, 290 (1988)Google Scholar
2. Horikoshi, Y., Kawashima, M. and Yamaguchi, H. : Jpn. J. Appl. Phys., 27, 169 (1988)Google Scholar
3. Takeyasu, N. et al., J. Cryst. Growth, 111, 502 (1991)Google Scholar
4. Nakano, A. and Ogata, K., KEK Progress Report, 90–3, pp. 156, National Laboratory for High Energy Physics, Japan, 1991 Google Scholar
5. Stem, E.A., Phys. Rev., B10, 3027 (1974)Google Scholar
6. McKale, A.G. et al., J. Amer. Chem. Soc., 110, 3763 (1988)Google Scholar