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Work Function Difference Between N-Type μc-Si Gate Electrodes Deposited by Remote Pecvd and P-Type c-Si Substrates in Mos Capacitors

Published online by Cambridge University Press:  21 February 2011

D.R. Lee  and
G. Lucovsky
D.R. Lee
Affiliation:
Departments of Physics and Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202, U.S.A.
G. Lucovsky
Affiliation:
Departments of Physics and Materials Science & Engineering, North Carolina State University, Raleigh, North Carolina 27695–8202, U.S.A.
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Abstract

We have used remote PECVD to deposit highly-doped μc-Si films for use as gate electrodes in MOS capacitors. The flatband voltages of capacitors with different oxide thicknesses have been measured by high-frequency capacitance-voltage and have been used to determine the work function difference between an n-type μc-Si electrode and a p-type c-Si substrate. This value for ϕμs is discussed in terms of a band diagram for the stacked-gate MOS device, and is compared to the expected value.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 979
Copyright
Copyright © Materials Research Society 1992

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References

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