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Width and Gap Dependent Performance of Ferroelectric Coplanar Waveguide Phase Shifter Based on Ba1-xSrxTiO3 Thin Films

Published online by Cambridge University Press:  01 February 2011

Seung Eon Moon ,
Eun-Kyoung Kim ,
Min Hwan Kwak ,
Young-Tae Kim ,
Han-Cheol Ryu ,
Su-Jae Lee ,
Kwang-Y ong Kang  and
Won-Jeong Kim
Seung Eon Moon
Affiliation:
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, 305–350, Korea.
Eun-Kyoung Kim
Affiliation:
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, 305–350, Korea.
Min Hwan Kwak
Affiliation:
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, 305–350, Korea.
Young-Tae Kim
Affiliation:
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, 305–350, Korea.
Han-Cheol Ryu
Affiliation:
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, 305–350, Korea.
Su-Jae Lee
Affiliation:
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, 305–350, Korea.
Kwang-Y ong Kang
Affiliation:
Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, 305–350, Korea.
Won-Jeong Kim
Affiliation:
2 Department of Physics, Changwon National University, Changwon, 641–773, Korea.
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Abstract

(001) oriented (Ba, Sr)TiO3 (BST) thin films were deposited on MgO (001) single crystal substrates by the pulsed laser deposition method. Structural properties of BST films were investigated using X-ray diffractometer. Coplanar waveguide (CPW) device based on BST/MgO layer structure was fabricated by dc sputtering deposition, photolithography and etching process. To study the geometrical factor dependent microwave performance of the CPW phase shifter based on (001) oriented BST film, the CPW devices having various gap and width were fabricated. The microwave dielectric properties of BST CPW phase shifter devices were examined by calculating the scattering parameter obtained using a HP 8510C vector network analyzer with the frequency range 0.5 ∼ 20 GHz at room temperature under the dc bias field of 0 ∼ 40V. The measured return loss and insertion loss at 10 GHz with no dc bias were about -12 ∼ -4 dB and -14 ∼ -3 dB, respectively, which mainly depended on the impedances of the CPW transmission lines. The measured differential phase shift values were about 20 ° ∼ 140 ° at 10 GHz with 40 V dc bias variations, which depended on the gap size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 833: Symposium G – Materials, Integration, and Packaging Issues for High-Frequency Devices II , 2004 , G3.8
Copyright
Copyright © Materials Research Society 2005

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References

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