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Wide-Gap a-Si:H Fabricated by Controlling Voids

Published online by Cambridge University Press:  10 February 2011

K. Yoshino ,
W. Futako ,
Y. Wasai  and
I. Shimizu
K. Yoshino
Affiliation:
Tokyo Institute of Technology, The Graduate School 4259 Nagatsuta, Midori-ku, Yokohama Japan 226
W. Futako
Affiliation:
Tokyo Institute of Technology, The Graduate School 4259 Nagatsuta, Midori-ku, Yokohama Japan 226
Y. Wasai
Affiliation:
Tokyo Institute of Technology, The Graduate School 4259 Nagatsuta, Midori-ku, Yokohama Japan 226
I. Shimizu
Affiliation:
Tokyo Institute of Technology, The Graduate School 4259 Nagatsuta, Midori-ku, Yokohama Japan 226
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Abstract

High quality wide gap hydrogenated amorphous silicon has been prepared using the chemical annealing technique. It was possible to prepare materials with band gaps ranging 1.8 to 2.1 eV by varying the preparation parameters. Low defect densities less than (3–8) x 1015 cm-3 could be maintained over the entire band gap range. Improved stability for light soaking was also observed in the wide gap materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 335
Copyright
Copyright © Materials Research Society 1996

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References

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