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A Weak Beam Imaging Technique for the Characterization of Interfacial Roughness in (InGa)As/GaAs Strained Layer Structures

Published online by Cambridge University Press:  25 February 2011

J. Y. Yao ,
T. G. Andersson  and
G. L. Dunlop
J. Y. Yao
Affiliation:
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
T. G. Andersson
Affiliation:
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
G. L. Dunlop
Affiliation:
Department of Mining and Metallurgical Engineering, University of Queensland, St. Lucia 4067 Queensland, Australia
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Abstract

A transmission electron microscope weak beam imaging technique has been developed for the characterization of interfacial roughness in lattice strained (InGa)As/GaAs multiple layered structures. In this technique, the heterointerfaces of (100) type strained layers are imaged in an inclined projection with a g311 diffracted reflection at off-Bragg conditions which gives an enhanced contrast from variations in strained layer thickness. A calculation based on the kinematic theory of contrast was made in order to gain a better understanding of the contrast. The calculation suggests that the observed contrast is due to monolayer scale variations in thickness of the strained layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 345
Copyright
Copyright © Materials Research Society 1990

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References

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