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Wafer Bonding of Diamond Films to Silicon for Silicon-on-Insulator Technology

Published online by Cambridge University Press:  15 March 2011

Gleb N. Yushin ,
Scott D. Wolter ,
Alexander V. Kvit ,
Ramon Collazo ,
John T. Prater ,
Brian R. Stoner  and
Zlatko Sitar
Gleb N. Yushin
Affiliation:
North Carolina State Univ, Dept. of Material Science, Raleigh, NC 27695, U.S.A.
Scott D. Wolter
Affiliation:
North Carolina State Univ, Dept. of Material Science, Raleigh, NC 27695, U.S.A.
Alexander V. Kvit
Affiliation:
North Carolina State Univ, Dept. of Material Science, Raleigh, NC 27695, U.S.A.
Ramon Collazo
Affiliation:
North Carolina State Univ, Dept. of Material Science, Raleigh, NC 27695, U.S.A.
John T. Prater
Affiliation:
Army Research Office, RTP, NC, U.S.A.
Brian R. Stoner
Affiliation:
MCNC, Material and Electronic Technologies Division, RTP, NC 27709, U.S.A.
Zlatko Sitar
Affiliation:
North Carolina State Univ, Dept. of Material Science, Raleigh, NC 27695, U.S.A.
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Abstract

Polycrystalline diamond films previously grown on silicon were polished to an RMS roughness of 15 nm and bonded to the silicon in a dedicated ultrahigh vacuum bonding chamber. Successful bonding under a uniaxial mechanical stress of 32 MPa was observed at temperatures as low as 950°C. Scanning acoustic microscopy indicated complete bonding at fusion temperatures above 1150°C. Cross-sectional transmission electron microscopy later revealed a 30 nm thick intermediate amorphous layer consisting of silicon, carbon and oxygen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A2.6
Copyright
Copyright © Materials Research Society 2002

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References

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