Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-25T00:10:07.688Z Has data issue: false hasContentIssue false
  • English
  • Français

VHF-GD a-Si:H Films Prepared at Very Low Temperature

Published online by Cambridge University Press:  25 February 2011

Y. Ziegler ,
H. Curtins ,
J. Baumann  and
A. Shah
Y. Ziegler
Affiliation:
Institute of Microtechnology, University of Neuchâtel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland, + 4138 24 60 00
H. Curtins
Affiliation:
Institute of Microtechnology, University of Neuchâtel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland, + 4138 24 60 00
J. Baumann
Affiliation:
University of Konstanz, Jacob-Burckhardt-strasse 25–35, D-7750 Konstanz 1, Germany.
A. Shah
Affiliation:
Institute of Microtechnology, University of Neuchâtel, A.L. Breguet 2, CH-2000 Neuchâtel, Switzerland, + 4138 24 60 00
Get access

Abstract

Structural, optical and electrical properties of a-Si:H films prepared with the VHF Glow Discharge system were studied as function of deposition temperature, particularly in the range below 100°C. Usually, this material has poor optoelectronic properties. The a-Si:H material discussed in this work shows a surprisingly low hydrogen content, a low dihydride to monohydride ratio, good optical and electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 81
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Weitzel, I., Primig, R. and Kempter, K., Thin Solid Films 75, 143 (1981).Google Scholar
[2] Catalano, A., unpublished work, RCA Laboratory, Princeton, New Jersey (1982).Google Scholar
[3] Beyer, W. and Wagner, H., J. Non-Cryst. Solids 59–60, 161 (1983).CrossRefGoogle Scholar
[4] Matzuda, A., J. Non-Cryst. Solids 59–60, 767 (1983).Google Scholar
[5] Curtins, H., Wyrsch, N., Favre, Myriam and Shah, A. V., Plasma Chem. Plasma Process. 7, 267 (1987).Google Scholar
[6] Shank, H., Fang, C. J., Ley, L., Cardona, M., Demond, F. J. and Kalbitzer, S., Phys. Stat. Sol (b) 100, 43, (1980).Google Scholar
[7] Jackson, W. B. and Amer, N. M., Phys. Rev. B 25, 5559 (1982)Google Scholar
[8] Vanacek, M., Kocka, J., Stuchlik, J., Kozisek, Z., Stika, O. and Triska, A., Solar Energy Materials 8, 411 (1983).Google Scholar
[9] Kluge, and Alexander, , X-Ray diffraction procedure, Willey ans Son (1970)Google Scholar
[10] Street, R. A., Solar Cell 24, 211 (1988).Google Scholar
[11] Soule, D. E., Reedey, G. T., Peterson, E. M. and McMillan, J. A., AIP Conf. Proc. (USA) 73, 89 (1981).Google Scholar
[12] Richter, H., Trodahl, J., and Cardona, M., J. Non-Cryst. Solids 59–60, 181 (1983).Google Scholar
[13] Vepreck, S., Heintze, M., Sarrot, F.-A., Jurcik-Rajman, M. and Willmott, P., Mat. Res. Soc. Symp. Proc. 118, 3 (1988).Google Scholar
[14] Favre, Myriam, Curtins, H. and Shah, A. V., J. Non-Cryst. Solids 97–98, 731 (1987).Google Scholar