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Very High On/Off Ratio in Vertical-Type Metal-Base Organic Transistors

Published online by Cambridge University Press:  26 February 2011

Ken-ichi Nakayama  and
Masaaki Yokoyama
Ken-ichi Nakayama
Affiliation:
nakayama@chem.eng.osaka-u.ac.jp, Osaka University, Graduate School of Engineering, 2-1, Yamadaoka, Suita, Osaka, 565-0871, Japan
Masaaki Yokoyama
Affiliation:
yokoyama@mls.eng.osaka-u.ac.jp, Osaka University, Graduate School of Engineering, 2-1 Yamadaoka, Suita, Osaka, 565, Japan
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Abstract

The on/off ratio of the vertical-type metal-base organic transistors was drastically improved by heat treatment in air. The heat treatment after deposition of the collector layer and base electrode reduced the leakage current between the base and collector, resulting in remarkable suppression of the off current. As a result, in addition to the advantage of low voltage and high current operation based on the vertical structure, very high on/off ratio exceeding 105 was achieved.

Keywords

deviceselectronic materialthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S10-05
Copyright
Copyright © Materials Research Society 2007

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References

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