Hostname: page-component-84b7d79bbc-g7rbq Total loading time: 0 Render date: 2024-07-27T18:51:16.437Z Has data issue: false hasContentIssue false
  • English
  • Français

Vertical-Type a-Si:H Field-Effect Transistors

Published online by Cambridge University Press:  21 February 2011

Yasutaka Uchida  and
Masakiyo Matsumura
Yasutaka Uchida
Affiliation:
Department of Physcal Electronics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, Japan
Masakiyo Matsumura
Affiliation:
Department of Physcal Electronics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, Japan
Get access

Abstract

Vertical-type a-Si:H Field Effect Transistors with 1 μm channel length have been investigated. A simple analysis of the FET characteristics indicates that the reduction of the channel length is an effective method to improve the FET characteristics at least up to the channel length of 1 μm. Experimental results showed that the on-resistance is approximately propotional to the channel length and that on off current ratio of the vertical-type FET with 1 μm channel length was more than 104.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 287
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Snell, A.J., Mackenzie, K.D., Spear, W.E. and LeComber, P.G.:Appl. Phys. 24, (1981) p.357.10.1007/BF00899734CrossRefGoogle Scholar
2) Nagata, Y., Sugata, M., Yoshooka, S., Hatanaka, M., Matsumoto, O. and Nakagiri, T. 9th Seminar of property and application in amorphous material (1982) p.44.Google Scholar
3) Ishibashi, K. and Matsumura, M.: Appl. Phys. Lett. 41, (1982) p.454.10.1063/1.93569CrossRefGoogle Scholar
4) Uchida, Y., Nara, Y. and Matsumura, M.: IEEE Electron Device Lett. April (1984).Google Scholar
5) Okada, H., Nara, Y. and Matsumura, M.: 31th Annual Meeting of Jpn. Soc. Appl. Phys., March (1984).Google Scholar
6) Tarui, Y., Hayashi, Y. and Sekikawa, T.: Proc. 2nd Conf. on Solid State Devices, (1971) p.193.Google Scholar
7) Sugiura, O. and Matsumura, M.: Trans IECE of Japan, J65-C, (1982) p.914.Google Scholar
8) Kishida, S., Naruke, Y., Uchida, Y. and Matsumura, M.: Jpn. J. Appl. Phys. 22. (1983) p.511.CrossRefGoogle Scholar
9) Matsumura, M., Kuno, S. and Uchida, Y.: J. de Physique Colloque 42, (1981) C4–519.Google Scholar
10) Hirose, N., Uchida, Y. and Matsumura, M.: 31th Annual Meeting of Jpn. Soc. Appl. Phys., March (1984).Google Scholar
11) Matsumura, M. and Uchida, Y.: J. de Physique Colloque 42, (1981) C4–671.Google Scholar