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Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters

Published online by Cambridge University Press:  10 February 2011

N. V. Edwards ,
S. D. Yoo ,
M. D. Bremser ,
M. N. Horton ,
N. R. Perkins ,
T. W. Weeks Jr. ,
H. Liu ,
R. A. Stall ,
T. F. Kuech  and
R. F. Davis
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N. V. Edwards
Affiliation:
NCSU, Raleigh
S. D. Yoo
Affiliation:
NCSU, Raleigh
M. D. Bremser
Affiliation:
NCSU, Raleigh
M. N. Horton
Affiliation:
U. of Wisc., Madison, WI;
N. R. Perkins
Affiliation:
U. of Wisc., Madison, WI;
T. W. Weeks Jr.
Affiliation:
NCSU, Raleigh
H. Liu
Affiliation:
CEMCORE, Somerset, NJ; now at Hewlett-Packard, San Jose, CA.
R. A. Stall
Affiliation:
CEMCORE, Somerset, NJ;
T. F. Kuech
Affiliation:
U. of Wisc., Madison, WI;
R. F. Davis
Affiliation:
NCSU, Raleigh
D. E. Aspnes
Affiliation:
NCSU, Raleigh
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Abstract

We provide the widest estimate thus far of the range of tensile and compressive stress (−3.8 to 3.5 kbar) that GaN epitaxial material can withstand before relaxation occurs, and an unambiguous determination of the spin-orbit splitting Δso = 17.0 ± 1 meV for the material. These are achieved by analyzing 10K reflectance data for the energy separation of transitions between the uppermost valence bands and the lowest conduction band of wurtzitic GaN as a function of biaxial stress for a series of GaN films grown on both Al2O3 and 6H-SiC substrates. Our data explicitly show the nonlinear behavior of the excitonic energy splittings B-A and C-A vs. the energy position of the A exciton, which stands in contrast to the linear approximations used by previous workers analyzing material grown only on Al2O3 substrates. Further, the lineshape ambiguities present in GaN reflectance spectra that hindered the accurate determination of such excitonic energies have also been resolved by analyzing these data in reciprocal space, where critical point energies are determined by phase effects to an accuracy of ±0.5 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 781
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1 Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
2 Dingle, R., Sell, D.D., Stokowski, S.E., and Ilegems, M., Phys. Rev. B 4, 1211 (1971).Google Scholar
3 Aspnes, D.E., Surf. Sci. 135, 284 (1983).Google Scholar
4 Orton, J.W., Semicond. Sci. Technol. 11, 1026 (1996).Google Scholar
5 Chuang, S.L. and Chang, C.S., Phys. Rev. B 54, 2491 (1996).Google Scholar
6 Gil, B., Briot, O., and Aulombard, R.L., Phys. Rev. B 52, R17 028 (1995).Google Scholar
7 Hopfield, J.J., J. Phys. Chem. Solids 15, 97 (1960).Google Scholar
8 Edwards, N.V., Bremser, M.D., Weeks, T.W. Jr., Kern, R.S., Liu, H., Stall, R.A., Wickenden, A.E., Doverspike, K., Gaskill, D.K., Freitas, J.A. Jr., Rossow, U., Davis, R.F., and Aspnes, D.E., Proc. Mat. Res. Soc. 395, Boston, Ma., 1995.Google Scholar
9 Weeks, T.W. Jr., Bremser, M.D., Ailey, K.S., Carlson, E., Perry, W.G., and Davis, R.F., Appl. Phys. Lett. 67, 401 (1995).Google Scholar
10 EMCORE Corporation, Somerset, NJ 08873.Google Scholar
11 Perkins, N.R., Horton, M.N., and Keuch, T.F., Proc. Mat. Res. Soc. 395, Boston, Ma, 1995.Google Scholar
12 Buyanova, I.A., Bergman, J.P., Monemar, B., Amano, H., and Akasaki, I., Appl. Phys. Lett. 69, 1255 (1996).Google Scholar
13 Monemar, B., Phys. Rev. B 10, 676 (1974).Google Scholar
14 Harris, C.I., Monemar, B., Amano, H., and Akasaki, I., Appl. Phys. Lett. 67, 840 (1995).Google Scholar
15 Shan, W., Schmidt, T.J., Yang, X.H., Hwang, S.J., Song, J.J., and Goldenberg, B., Appl. Phys. Lett. 66, 985 (1995).Google Scholar
16 Mohammad, S.N., Salvador, A. A., and Morkoç, H., Proc. IEEE 83, 1306 (1995).Google Scholar
17 Reynolds, D.C., Look, D.C., Kim, W., Aktas, Ö., Botchkarev, A., Salvador, A., Morkoc, H., and Talwar, D.N., J. Appl. Phys. 80, 594 (1996).Google Scholar
18 Properties of Group III Nitrides, edited by Edgar, J.H. (INSPEC, IEEE, London, 1994).Google Scholar
19 Nye, J.F., Physical Properties of Crystals (Clarendon Press, Oxford, 1985).Google Scholar
20 Pakula, K., Wysmolek, A., Korona, K.P., Baranowski, J.M., Stepniewski, R., Gregory, I., Bockowski, M., Jun, J., Krukowski, S., Wroblewski, M., and Porowski, S., Solid State Commun. 97, 919 (1996).Google Scholar
21 Gil, B., Hadani, F. and Morkoç, H., Phys. Rev. B 54, 7678 (1996).Google Scholar