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Vapor Deposition Of Very Low K Polymer Films, Poly(Naphthalene), Poly(Fluorinated Naphthalene)

Published online by Cambridge University Press:  15 February 2011

C. -I. Lang ,
G. -R. Yang ,
J. A. Moore  and
T. -M. Lu
C. -I. Lang
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, New York 12180
G. -R. Yang
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, New York 12180
J. A. Moore
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, New York 12180
T. -M. Lu
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, New York 12180
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Abstract

Several novel processes have been developed in our lab to synthesize and deposit polymers that have extremely low dielectric constants (below 2.5) as thin films. These reactive intermediates are condensed onto wafers in a vacuum chamber and no chemical waste is produced. Furthermore, cold traps can be used to recover uncondensed monomers through the pumping system. Because of the extremely low dielectric constant, very low moisture uptake and high temperature stability of these vapor depositable materials, these environmentally friendly polymers are very attractive for future electronic applications as interlayer dielectrics. Examples are Parylene-F(fluorinated), poly(naphthalene) (PNT-N), poly(fluorinated naphthalene) (PNT-F), and Teflon AF 1600 (amorphous). These films were deposited at substrate temperatures between −20 and 350 °C and at deposition pressure was 10−4−2.5 Torr. The film thicknesses were between 0.1–10 μ. and dielectric constants were between 1.9–2.5. The thermal stabilities of these films were between 360–590 °C. Among them, poly(fluorinated naphthalene) dissociates at about 590 °C. Poly(naphthalene) and poly(fluorinated naphthalene) are obtained as films by vaporizing monomers in vacuo and transporting the vapor to a hot surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 381: Symposium F – Low-Dielectric Constant Materials--Synthesis and Applications in Micro. , 1995 , 45
Copyright
Copyright © Materials Research Society 1995

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References

1. Nason, T.C., Moore, J.A., and Lu, T.-M., Appl. Phys. Lett. 1, 60 (1992).Google Scholar
2. Blanchet, G.B., Appl. Phys. Lett. 62, 478 (1993).Google Scholar
3. Dolbier, W.R., Jr., Asghar, M.A., Pan, H.-Q., U.S. Patent No. 5 210 341 (1993).Google Scholar
4. You, L., Yang, G.-R., Lang, C.-I., Wu, P.K., Lu, T.-M., Moore, J.A., McDonald, J.F.P., J. Vac. Sci. Technol. A, 11(6), 3047 (1993).Google Scholar
5. You, L., Yang, G.-R., Lu, T.-M., Moore, J.A., McDonald, J.F.P., U.S. Patent No. 5 268 202 (1993).Google Scholar
6. Speight, J.G., Kovacic, P., Koch, F. W., J. Macromol. Sci. Revs. Macromol. Chem., C 5, 295 (1971).Google Scholar
7. Satoh, M., Uesugi, F., Tabata, M., Kaneto, K., Yoshino, K., J. Chem. Soc., Chem. Comm., 550 (1986).Google Scholar
8. Zecchin, S., Tomat, R., Schiavon, G., Zotti, G., Synth. Met., 25, 393 (1988).Google Scholar
9. Hara, Susumu and Toshima, Naoki, Chem. Lett., 269–272 (1990).Google Scholar
10. Bergman, R.G., Acc. Chem. Res., 6, 2531 (1973).Google Scholar
11. Lockhart, T.P., Cornita, P.B., Bergman, R.G., J. Am. Chem. Soc., 103, 4082 (1981).Google Scholar
12. Takahashi, S., Kuroyama, Y., Sonogashira, K., Hagihara, N., Synthesis, 627 (1980).Google Scholar
13. Chow, S.W., Pilato, L.A. and Wheelwright, W.L., J. Org. Chem., 35, 20(1070).Google Scholar
14. Moore, J. A., Lang, C-I., Lu, T.-M. and Yang, G.-R., ”Polymers for Microelectronics ”, ACS Symposium Series, 1995, to be published.Google Scholar
15. Yang, G.-R.; Dabral, S.; You, L.; McDonald, J.F.P.; Lu, T.-M. J. of Electronic Materials, 20, 571 (1991)Google Scholar