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Vanadium Dioxide Films Grown from Vanadium Tetrakis(t-Butoxide) by the Sol-Gel Process

Published online by Cambridge University Press:  25 February 2011

K. R. Speck ,
H. S-W. Hu ,
R. A. Murphy  and
R. S. Potember
K. R. Speck
Affiliation:
The Johns Hopkins UniversityApplied Physics Laboratory Laurel, Maryland 20707, USA.
H. S-W. Hu
Affiliation:
The Johns Hopkins UniversityApplied Physics Laboratory Laurel, Maryland 20707, USA.
R. A. Murphy
Affiliation:
The Johns Hopkins UniversityApplied Physics Laboratory Laurel, Maryland 20707, USA.
R. S. Potember
Affiliation:
The Johns Hopkins UniversityApplied Physics Laboratory Laurel, Maryland 20707, USA.
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Abstract

Vanadium dioxide thin films have been grown from vanadium tetrakis (t-butoxide) by the sol-gel process. A new method for the synthesis of the vanadium precursor was developed. Films were deposited by dipcoating glass slides from an isopropanol solution, followed by post-deposition annealing of the films at 600 °C under nitrogen. The properties of these films, to a high degree, were a function of the preparation conditions. These gel-derived VO2 films undergo a reversible semiconductor-to-metal phase transition near 72 °C, exhibiting characteristic resistive and spectral switching comparable with near stoichiometric VO2 films prepared on non-crystalline substrates by other techniques. Paralleling the investigation of pure VO2, films were doped with hexavalent transition metal oxides to demonstrate lowering of the transition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 121: Symposium H – Better Ceramics Through Chemistry III , 1988 , 667
Copyright
Copyright © Materials Research Society 1988

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References

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