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Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces As Determined By High Resolution X-Ray Photoelectron Spectroscopy

Published online by Cambridge University Press:  15 February 2011

J. L. Alay ,
M. Fukuda ,
C. H. Bjorkman ,
K. Nakagawa ,
S. Sasaki ,
S. Yokoyama  and
M. Hirose
J. L. Alay
Affiliation:
Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima 724, Japan
M. Fukuda
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
C. H. Bjorkman
Affiliation:
Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima 724, Japan
K. Nakagawa
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
S. Sasaki
Affiliation:
Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima 724, Japan
S. Yokoyama
Affiliation:
Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima 724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
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Abstract

Ultra-thin SiO2/Si(111) interfaces have been studied by high resolution x-ray photoelectron spectroscopy. The deconvolution of the Si 2p core-level peak reveals the presence of the suboxide states Si3+ and Si1+ and the nearly complete absence of Si2+. The energy shifts found in the Si 2p and O is core-level peaks arising from charging effects arc carefully corrected. The valence band density of states for ultra-thin (1.8 - 3.7 nm thick) SiO2 is obtained by subtracting the bulk Si contribution from the measured spcctrum and by taking into account the charging effect of SiO2 and bulk Si. Thus obtained valence band alignment of ultra-thin SiO2/Si(111) interfaces is found to be 4.36 ± 0.10 eV regardless of oxide thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 249
Copyright
Copyright © Materials Research Society 1995

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References

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