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Vacancy-Type Defects in Proton-Bombarded InP
Published online by Cambridge University Press: 26 February 2011
Abstract
In proton-bombarded InP single crystals the fluence-dependent production of vacancy-type radiation defects and their annealing behaviour are studied. The results are interpreted using measurements of the total defect concentration, the carrier concentration and the infrared absorption.
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- Research Article
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- Copyright © Materials Research Society 1992
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