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UV Photoannealing and RTP of Thin Sol-Gel Films

Published online by Cambridge University Press:  10 February 2011

R. E.Van de Leest
Affiliation:
Philips Research Labs, Prof.Holstlaan 4, 5656 AA Eindhoven, The Netherlands
F. Roozeboom
Affiliation:
Philips Research Labs, Prof.Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

Various annealing methods for sol-gel films have been investigated. Thermal, photothermal, RTP and excimer laser annealing have been used to convert sol-gel precursor films into oxidic films. RTP annealing of sol-gel films yields better results than classical thermal annealing or excimer laser irradiation. Photochemical effects during RTP annealing contribute to obtain high-quality oxide films. The various annealing methods are illustrated by the annealing of alkoxide precursor films of tantalum, iron, nickel and yttrium.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

[1] Klein, L.C., Sol-Gel Technology for Thin Films, Fibers, Preforms. Electronics and Specialty Shapes., Noyes Publ.,Park Ridge, 1988.Google Scholar
[2] Keddie, J.L., Braun, P.V. and Giannelis, E.P., J.Am.Ceram.Soc., 77, p. 1592, 1994.Google Scholar
[3] Leest, R.E. Van de, Horickx, M.J.A. and Hermans, P.W.H., 2nd ICPEPA, Jerusalem, September 1995.Google Scholar
[4] Leest, R.E. Van de, Appl. Surf. Sci., 86, p.278, 1995.Google Scholar
[5] Maekawa, S., Okude, K. and Ohishi, T., J.Sol-Gel Sci.Techn., 2, p.497, 1994.Google Scholar
[6] Imai, H., Hirashima, H., Awazu, K. and Onuki, H., SPIE, vol.2288, p.71, 1994.Google Scholar
[7] Imai, H., Hirashima, H., Awazu, K. and Onuki, H., J.Ceram.Soc.Japan, 102, p. 1094, 1994.\Google Scholar
[8] Singh, R., J.Appl.Phys., 63, R59, 1988.Google Scholar
[9] Roozeboom, F. in Advances in Rapid Thermal and Integrated Processing, ed. Roozeboom, F., Nato ASI Series, Vol.318, 521, 1996, Kluwer Acad. Publ., Dordrecht, The Netherlands.Google Scholar
[10] Thakur, R.P.S., Singh, R., Nelson, A.J., Ullal, H.S., Chaudhuri, J. and Gondhalekar, V., J.Appl. Phys., 69, p.367, 1991.Google Scholar
[lsqb;11] Singh, R., Sinha, S., Thakur, R.P.S. and Chou, P., Appl.Phys.Lett., 58, p.1217, 1991.Google Scholar
[lsqb;12] Mavoori, J., Singh, R., Sharangpani, R., Gong, C., Poole, K.F., Singh, R.K. and Natajaran, R., MRS Symp. Proc., 342, p.201, 1994.Google Scholar
[lsqb;13] Singh, R., Mavoori, J., Thakur, R.P.S. and Narayanan, S., MRS Symp.Proc., 342, p.437, 1994.Google Scholar
[lsqb;14] Busca, G., Lorenzelli, V., Ramis, G. and Willey, R.J., Langmuir, 9, 1492, 1993 Google Scholar