Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-28T20:11:03.221Z Has data issue: false hasContentIssue false

Utilization of a-Si:H Switching Diodes for Signal Readout from a-Si:H Pixel Detectors

Published online by Cambridge University Press:  01 January 1993

Gyuseong Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
J.S. Drewery
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
W.S. Hong
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
T. Jing
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
H. Lee
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
S.N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
A. Mireshghi
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
D. Wildermuth
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA , 94720
Get access

Abstract

Two-dimensional arrays of amorphous silicon photodiodes can be used as position-sensitive radiation detectors when they are coupled to an appropriate phosphor. We have developed signal readout schemes from amorphous silicon photodiode arrays utilizing one or two switching diodes attached to each pixel photodiode. Individual cells and prototype arrays of amorphous silicon photodiodes with single- and double-diode switching readout were fabricated and tested. A charge storage time and a readout time were measured. The measurement results were analyzed by simple circuit theory.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Perez-Mendez, V., Morel, J., Kaplan, S.N. and Street, R.A., “Detection of charged particles in amorphous silicon layers,” Nucl. Instr. and Meth., A252, pp. 478482 (1987).Google Scholar
[2] Equer, B. and Karar, A., “Amorphous semiconductors for particle detection: Physical and technical limits and possibilities,” Nucl. Instr. and Meth., A275, pp. 558563 (1989).Google Scholar
[3] Perez-Mendez, V., Kaplan, S.N., Cho, G., Fujieda, I., Qureshi, S., Ward, W. and Street, R.A., “Hydrogenated Amorphous Silicon Pixel Detectors for Minimum Ionizing Particles, ” Nucl. Instr. and Meth., A273, pp. 127134 (1988).Google Scholar
[4] Street, R. A., Nelson, S., Antonuk, L. and Perez-Mendez, V., in Amorphous Silicon Technology - 1990. edited by Taylor, P.C., Thompson, M.J., LeComber, P.G., Hamakawa, Y. and Madan, A. (Mat. Res. Soc. Symp. Proc. 192, San Francisco, CA. 1990), pp. 441452.Google Scholar
[5] Yamamoto, K., Sai, K., Ohta, Y., Mimura, H. and Kitamura, K., “Amorphous Silicon 2-Dimensional Image Sensors,” Technical Digest of the 8th Sensor Symp., 1989. pp. 5558.Google Scholar
[6] Boer, W.D., Baron, Y. and Yaniv, Z., “Two-terminal Switches for Active-matrix LCDs,” Information Display 10/1990. pp. 46.Google Scholar