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Using Thermal Oxidation and Rapid Thermal Annealing on Polycrystalline-SiGe for Ge Nanocrystals

Published online by Cambridge University Press:  01 February 2011

Chyuan-Haur Kao ,
C. S. Lai ,
M. C. Tsai ,
C. H. Lee ,
C. S. Huang  and
C. R. Chen
Chyuan-Haur Kao
Affiliation:
chkao@mail.cgu.edu.tw, Chang Gung University, Electronics Engineering, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, 333, Taiwan, +886-3-2118800-5783, +886-3-2118507
C. S. Lai
Affiliation:
cslai@mail.cgu.edu.tw, Chang Gung University, Electronics Engineering, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, 333, Taiwan
M. C. Tsai
Affiliation:
chkao@mail.cgu.edu.tw, Chang Gung University, Electronics Engineering, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, 333, Taiwan
C. H. Lee
Affiliation:
chkao@mail.cgu.edu.tw, Chang Gung University, Electronics Engineering, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, 333, Taiwan
C. S. Huang
Affiliation:
chkao@mail.cgu.edu.tw, Chang Gung University, Electronics Engineering, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, 333, Taiwan
C. R. Chen
Affiliation:
chkao@mail.cgu.edu.tw, Material Science Service Corporation, Hsin Chu, 300, Taiwan
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Abstract

In this paper, simple techniques were proposed to fabricate germanium nanocrystal capacitors by one-step thermal oxidation and/or rapid thermal annealing on polycrystalline-SiGe (poly-SiGe) deposited with a LPCVD (low pressure chemical vapor deposition) system. This thermal oxidation method can directly result in the top-control oxide layer via the oxidation of amorphous-Si film and the formation of Ge nanocrystals from the poly-SiGe film. Otherwise, the rapid thermal annealing method can be also used to form Ge nanocrystals as comparison.

Keywords

annealingcrystallineGe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F03-21
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

[1]. Hanafi, H. I. Tiwari, S. and Khan, I. IEEE Electron. Devices. 43, (1996) 1553.Google Scholar
[2]. King, Ya-Chin, King, Tsu-Jae, and Hu, Chenming, IEDM Tech. Dig., (1998), p. 115.Google Scholar
[3]. Liu, Z. Lee, C. Narayanan, V. Pei, G. Kan, E. C. IEEE Electron. Devices. 49, (2002) 1606.Google Scholar
[4]. Chen, J. H. Wang, Y. Q. Yoo, W.J. Yeo, Y. C. Samudra, Ganesh, Chan, Daniel SH, Du, A. Y. Kwong, D. L. IEEE Electron. Devices. 51, (2004) 1840.Google Scholar