Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-19T07:30:47.347Z Has data issue: false hasContentIssue false
  • English
  • Français

Using Molecular-Beam Mass Spectrometry to Study the Pecvd of Diamondlike Carbon Films

Published online by Cambridge University Press:  22 February 2011

I.B. Graff ,
R.A. Pugliese Jr.  and
P.R. Westmoreland
I.B. Graff
Affiliation:
Department of Chemical Engineering, University of Massachusetts, 159 Goessmann Laboratory, Amherst, MA 01003-3110
P.R. Westmoreland
Affiliation:
Department of Chemical Engineering, University of Massachusetts, 159 Goessmann Laboratory, Amherst, MA 01003-3110
Get access

Abstract

Molecular-beam mass spectrometry has been used to study plasma-enhanced chemical vapor deposition (PECVD) of diamondlike carbon films. A threshold-ionization technique was used to identify and quantify species in the plasma. Mole fractions of H, H2, CH4, C2H2, C2H6 and Ar were measured in an 83.3% CH4/Ar mixture at a pressure of 0.1 torr and a total flow of 30 sccm. Comparisons were made between mole fractions measured at plasma powers of 25W and 50W. These results were compared to measured concentration profiles and to film growth rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 129
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakaue, H., Mitani, T., Kurokawa, H., Yonezawa, T. and Yoshio, H., Thin Solid Films, 212, 240 (1992).Google Scholar
2. Aisenberg, S. and Chabot, R., J. Appl. Phys., 42, 2953 (1971).CrossRefGoogle Scholar
3. Matsumoto, S., Sato, Y. and Kamo, M., Jap. Jrnl. Appl. Phys., 59, 3267 (1986).Google Scholar
4. Angus, J.C., Koidl, P. and Domitz, S., in Plasma Deposited Thin Films, edited by Mort, J. and Jansen, F. (CRC Press, Inc., Boca Raton, FL, 1986), pp. 89–127.Google Scholar
5. Biordi, J.C., Prog. Energy Combust Sci., 3, 151 (1977).CrossRefGoogle Scholar
6. Bourquard, S., Erni, D. and Mayor, J.M. in Proceedings of the 1st International Conference on Plasma Chemistry and Technology, edited by Boen, H. (Tecnomic, Lancaster, PA, 1983) p 101.Google Scholar
7. Robertson, R., Hills, D., Chatham, H. and Gallagher, A., Appl. Phys. Lett., 43, 544 (1983).CrossRefGoogle Scholar
8. Johnson, N.P., Webb, A.P., and Fabian, D.J. in Plasma Processing and Synthesis of Materials edited by Szekely, J. and Apelian, D. (Mater. Res. Soc. Proc. 30, 1984), pp. 277–282.Google Scholar
9. Smith, D.L., Alimonda, A.S., Chen, C., Ready, S.E. and Wacker, B., J. Electrochem. Soc., 137, 2, 614 (1990).Google Scholar
10. Fristrom, R.M. and Westenberg, A.A., Flame Structure (McGraw-Hill, New York, 1965) pp. 177–203.Google Scholar
11. Pugliese, R.A. Jr., Ph.D. Thesis, University of Massachusetts, 1992.Google Scholar
12. Rosenstock, H.M., Draxl, K., Steiner, B.W. and Herron, J.T., J. Phys. Chem. Ref. Data Supplement, 6, 1 (1977).Google Scholar