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The Use of Tetraethyltin as an N Type Dopant Source in GAAs, ALGAAs, and ALAS for Lasers and Bragg Reflectors Grown by MOCVD

Published online by Cambridge University Press:  22 February 2011

C. J. Pinzone ,
I. G. Neff ,
R. V. Chelakara ,
K. Fertitta  and
R. D. Dupuis
C. J. Pinzone
Affiliation:
AT&T Bell Laboratories; 600 Mountain Avenue; Murray Hill, NJ. 07974
I. G. Neff
Affiliation:
University of Texas at Austin, Microelectronics Research Center; Austin, Texas 78712
R. V. Chelakara
Affiliation:
University of Texas at Austin, Microelectronics Research Center; Austin, Texas 78712
K. Fertitta
Affiliation:
University of Texas at Austin, Microelectronics Research Center; Austin, Texas 78712
R. D. Dupuis
Affiliation:
University of Texas at Austin, Microelectronics Research Center; Austin, Texas 78712
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Abstract

The use of Tetraethyltin (TESn) as a source of donors in GaAs and its A1xGal-xAs alloys with x varied from 0 to 1 has been investigated for the growth of heterostructures by low pressure metalorganic chemical vapor deposition. (LP-MOCVD). The donor activity increases in the binary and ternary alloys as a function of tetraethyltin molar flow fraction and with increasing temperature. High quality one quarter wave Distributed Bragg reflectors (DBRs) were grown with TESn as an n type dopant source with no degradation in reflectivity observed. No surface accumulation of tin was observed and the morphology of all epitaxial samples was excellent. Sn incorporation in AlAs produced n type material as determined by Van der Pauw Hall measurements. The use of TESn as a convenient and controllable dopant source in structures such as vertical cavity surface emitting lasers which incorporate DBRs as well as other heterostructure devices is therefore practical..

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 283
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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