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Use of Low Temperature Si MBE Growth Techniques for High Performance SiGe/Si Electronics

Published online by Cambridge University Press:  25 February 2011

E. T. Croke ,
M. J. Harrell ,
M. E. Mierzwinski  and
J. D. Plummer
E. T. Croke
Affiliation:
Hughes Research Laboratories, SOU Malibu Canyon Rd., Malibu, CA 90265.
M. J. Harrell
Affiliation:
Hughes Research Laboratories, SOU Malibu Canyon Rd., Malibu, CA 90265.
M. E. Mierzwinski
Affiliation:
Stanford University, Center for Integrated Systems, Stanford, CA 94305.
J. D. Plummer
Affiliation:
Stanford University, Center for Integrated Systems, Stanford, CA 94305.
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Abstract

Through the use of low temperature Si molecular beam epitaxy (MBE), we have fabricated high performance Si1−x Gex/Si heterojunction bipolar transistors (HBTs) and bipolar inversion-channel field effect transistors (BICFETs). Our growth method employs a high temperature Si-assisted desorption followed by MBE growth at a temperature only slightly in excess of the critical temperature for two-dimensional layer-by-layer growth. [1] At this temperature, segregation of Sb has previously been shown to be kinetically limited. [2] In addition, significantly more strain can be frozen into such an epitaxial layer as compared with those grown at higher temperatures.[3] Secondary ion mass spectroscopy (SIMS) data verify the abruptness of the Sb doping profiles in our device structures. High resolution x-ray diffraction (HRXRD) data are consistent with planar, coherently strained Si1−x Gex layers in our HBTs. A gain of 2690 (3210) is observed in our BICFETs at 300 K (7 K).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 415
Copyright
Copyright © Materials Research Society 1993

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References

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