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The Use of Group V Alkyls as Replacements for Arsine and Phosphine in Hot-Walled VPe Reactors

Published online by Cambridge University Press:  28 February 2011

D. Noel Buckley
D. Noel Buckley*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

The replacement of arsine and phosphine in a hot-walled VPE reactor by Group V alkyls is described. Epitaxial layers of lnP and InGaAs were grown using trimethylarsenic and trimethylphosphorus respectively. The surface morphology obtained was equivalent to that of samples grown using arsine and phosphine. InGaAs samples with no intentional doping were n- type with a background carrier concentration of 6 × 1015 cm−3, about 3 times higher than that of comparison samples grown using arsine. Mobilities measured at 77 K and 300 K respectively were similar to those measured for corresponding samples grown using arsine, suggesting that no significant carbon incorporation occurred. InP was n-type with a background carrier concentration of 3-6 × 1017 cm−3, significantly higher than that of samples grown using phosphine. Preliminary SIMS measurements on the layers suggest that this is due to silicon-based impurities in the trimethylphosphorus. Results reported for MOCVD using arsenic and phosphorus alkyls are contrasted with present results for a hot-walled reactor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 223
Copyright
Copyright © Materials Research Society 1989

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