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The Use of Amorphous Silicon Emitters in Bipolar Transistors

Published online by Cambridge University Press:  28 February 2011

M. Ghannam ,
J. Nijs ,
R. De Keersmaecker  and
R. Mertens
M. Ghannam
Affiliation:
IMEC, Kapeldreef 75, 3030 Heverlee - Belgium
J. Nijs
Affiliation:
IMEC, Kapeldreef 75, 3030 Heverlee - Belgium
R. De Keersmaecker
Affiliation:
IMEC, Kapeldreef 75, 3030 Heverlee - Belgium
R. Mertens
Affiliation:
IMEC, Kapeldreef 75, 3030 Heverlee - Belgium
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Abstract

For the first time an operating heterojunction bipolar silicon transistor has been realized with phosphorous doped amorphous silicon (a-Si) emitter. The deposition of a-Si is a relatively simple technique. The current gain (β) of 14 at a base Gummel Number (G.N.) of 1.35 1013 s/cm4 is higher than that obtained with normal diffused emitter bipolar transistors with the same G.N. for the base. This adds a degree of freedom to the design of bipolar structures according to the compromise between base resistance and current gainCrucial points that have to be looked at further are interface recombination at the a-Si/c-Si transition and emitter resistance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 437
Copyright
Copyright © Materials Research Society 1985

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