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Use of a Field Effect Transistor to Study Phototransport Properties of a-Si:H

Published online by Cambridge University Press:  01 January 1993

A. R. Grant ,
P. D. Persans ,
R. F. Kwasnick  and
G. E. Possin
A. R. Grant
Affiliation:
Physics Department and Center for Integrated Electronics , Rensselaer Polytechnic Institute, Troy, NY 12180
P. D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics , Rensselaer Polytechnic Institute, Troy, NY 12180
R. F. Kwasnick
Affiliation:
Corporate Research and Development, General Electric, Niskayuna , NY 12309
G. E. Possin
Affiliation:
Corporate Research and Development, General Electric, Niskayuna , NY 12309
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Abstract

We report new measurements of the diffusion length of minority photocarriers in thin film amorphous silicon field effect transistor structures. We are able to vary the majority carrier photoconductance by more than four orders of magnitude while monitoring the effective ambipolar diffusion length using the photocarrier grating technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 883
Copyright
Copyright © Materials Research Society 1993

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References

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