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Urbach Edge, Disorder, and Absorption On-set in a-Si:H

Published online by Cambridge University Press:  01 February 2011

G. D. Cody
G. D. Cody*
Affiliation:
Mechanical and Aerospace Engineering, Rutgers University Mail Address: 30 Bainbridge St., Princeton NJ 09540, E-mail:gdcodypva@att.net
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Abstract

This paper presents a brief review of the research that began in the early '80s, continued through the '90s, and produced a “standard model” for the optical absorption edge of amorphous silicon. The research began as a response to the invention of a-Si:H solar cells by Carlson and Wronski at RCA laboratories in 1976, and the subsequent worldwide interest in the optical characterization of a-Si:H thin films. The immediate need was soon met, but the research continued as an effort to understand the physics of the optical absorption edge in a-Si:H, as well as to understand the differences between, and similarities to, the indirect optical absorption edge of c-Si. In this paper, we highlight the successes of this standard model, and briefly cover its experimental and theoretical development over the last 25 years. We summarize its current status, and suggest some experimental and theoretical opportunities for, and challenges to, what may now be called a standard model for the optical absorption edge of both a-Si:H and a-Ge:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A1.3
Copyright
Copyright © Materials Research Society 2005

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References

1 Wronski, C. R., Carlson, D. E., Daniel, R. E., Appl. Phys. Lett. 29, 602 (1976).10.1063/1.89158Google Scholar
2 Tauc, J., in Optical Properties of Solids Abeles, F., Ed. (North-Holland, Amsterdam, 1972) pp. 279.Google Scholar
3 Tauc, J., in Amorphous and Liquid Semiconductors Tauc, J., Ed. (Plenum, New York, 1974).10.1007/978-1-4615-8705-7Google Scholar
4 Cody, G. D., in Hydrogenated Amorphous Silicon, Volume 21B: Optical Properties Pankove, J. I., Ed. (Academic Press, Orlando, 1984) pp. 11–82.10.1016/S0080-8784(08)62910-5Google Scholar
5 Cody, G. D., Journal of Non-Crystalline Solids 141, 3–15 (1992).10.1016/S0022-3093(05)80513-7Google Scholar
6 Kurik, M. V., Phys. Stat. Sol. (a) 8, 9, 9–45 (1971).10.1002/pssa.2210080102Google Scholar
7 Skettrup, T., Phys. Rev. B 18, 2622–2631 (1978).10.1103/PhysRevB.18.2622Google Scholar
8 Wiley, J. D., Thomas, D., Schonherr, E., Breitschwerdt, A., J. Phys. Chem. Solids 41, 801–807 (1979).10.1016/0022-3697(80)90091-8Google Scholar
9 Abeles, B., Wronski, C. R., Tiedje, T., Cody, G. D., Solid State Communications 36, 537–540 (1980).10.1016/0038-1098(80)90382-8Google Scholar
10 Tauc, J., Gigorovici, R., Vancu, A., Phys. Status Solidi 15, 627–637 (1966).10.1002/pssb.19660150224Google Scholar
11 Hass, K. C., Ehrenreich, H., Annals of Physics 164, 77–102 (1985).10.1016/0003-4916(85)90005-3Google Scholar
12 Cody, G. D., Brooks, B. G., Abeles, B., Solar Energy Materials 8, 231–240 (1982).10.1016/0165-1633(82)90065-XGoogle Scholar
13 Abe, S., Toyazawa, Y., J. Physical Society of Japan 50, 2185–2194 (1981).10.1143/JPSJ.50.2185Google Scholar
14 Cody, G. D., in Physics and Applications of Amorphous Semiconductors Demichelis, F., Ed. (World Scientific, Singapore, 1988) pp. 28–62.Google Scholar
15 Frova, A., Selloni, A., in Tetrahedrally-Bonded Amorphous Semiconductors Adler, D., Fritzsche, H., Eds. (Plenum, New York, NY, 1985) pp. 271–285.10.1007/978-1-4899-5361-2_23Google Scholar
16 Jackson, W. B., Kelso, S. M., Tsai, C. C., Allen, J. W., Oh, S.-J., Phys. Rev. B 31, 5187–5198 (1985).10.1103/PhysRevB.31.5187Google Scholar
17 Bagley, B. G., Aspnes, D. E., Celler, G. K., Adams, A. C., in Laser and Electron Beam Interactions with solids Appleton, B. R., Cellar, G. K., Eds. (Elsevier, Amsterdam, 1982) pp. 483.Google Scholar
18 Fortman, C. M., Physical Review Letters 81, 3683–6 (1998).10.1103/PhysRevLett.81.3683Google Scholar
19 O'Leary, S. K., Applied Physics Letters 72, 1332–34 (1998).10.1063/1.120985Google Scholar
20 Malik, S. M., O'Leary, S. K., Appl. Phs. Lett. 80, 790 (2002).10.1063/1.1445476Google Scholar
21 O'Leary, S. K., Malik, S. M., J. Appl. Phys. 92, 4276 (2002).10.1063/1.1504174Google Scholar
22 Mott, N. F., Davis, E. A., Electronic Processes in Non-Crystalline Materials (Oxford University Press (Clarendon), London and New York, ed. 2nd, 1979).Google Scholar
23 Cody, G. D., Tiedje, T., Abeles, B., Brooks, B., Goldstein, Y., Physical Review Letters 47, 1480–1483 (1981).10.1103/PhysRevLett.47.1480Google Scholar
24 Persans, P. D., Ruppert, A. F., Chan, S. S., Cody, G. D., Solid State Communications 51, 203–207 (1984).10.1016/0038-1098(84)90996-7Google Scholar
25 Persans, P. D., Ruppert, A. F., Cody, G. D., Brooks, B. G., Solid State Communications 54, 461–464 (1985).10.1016/0038-1098(85)90950-0Google Scholar
26 Soukoulis, C. M., Cohen, M. H., Economou, E. N., Phs. Rev. Letters 53, 616–619 (1984).10.1103/PhysRevLett.53.616Google Scholar
27 Grein, C. H., John, S., Physical Review B 36, 7457–7648 (1987).10.1103/PhysRevB.36.7457Google Scholar
28 Grein, C. H., John, S., Physical Review B 39, 1140–1151 (1989).10.1103/PhysRevB.39.1140Google Scholar
29 Grein, C. H., John, S., Solid State Communications 70, 87–91 (1989).10.1016/0038-1098(89)90473-0Google Scholar
30 Grein, C. H., John, S., Physical Review B 41, 7641–7647 (1990).10.1103/PhysRevB.41.7641Google Scholar
31 John, S., Grein, C. H., Reviews of Solids State Sciences 4, 1–59 (1990).Google Scholar
32 MacFarlane, G. E., McLean, T. P., Quarrington, J. E., Roberts, V., Phys. Rev. 111, 1245 (1956).10.1103/PhysRev.111.1245Google Scholar
33 Aspnes, D. E., in Properties of Silicon - Inspec DataRreview Series. (INSPEC, London and New York, 1988).Google Scholar
34 Bludeau, W., Onton, A., Heinke, H. J., J. Appl. Phys. 45 1846 (1974).10.1063/1.1663501Google Scholar
35 Braunstein, R., Moore, A., Herman, F., Phys. Rev. 109, 695 (1958).10.1103/PhysRev.109.695Google Scholar
36 Weinstein, I. A., Zatsepin, A. F., Kortov, V. S., Physics of the Solid State 43, 246–250 (2001).10.1134/1.1349468Google Scholar
37 Beaudoin, M., DeVries, A. J. G., Johnson, S. R., Laman, H., Tiedje, T., Applied Physics Letters 70, 3540–2 (1997).Google Scholar
38 Orapunt, F., O'Leary, S. K., Applied Physics Letters 84, 523–525 (2004).10.1063/1.1641176Google Scholar
39 Cody, G. D., Wronski, C. R., Abeles, B., Stephens, R. B., Brooks, B., Solar Cells 2, 227–242 (1980).10.1016/0379-6787(80)90028-9Google Scholar
40 Remes, Z., Ph. D. Thesis, Charles University, Prague, (1999).Google Scholar
41 Viturro, R. E., Weiser, K., Philosophical Magazine B 53, 93–103 (1986).10.1080/13642818608238977Google Scholar
42 Wang, Q., Antoniadis, H., Schiff, E. A., Guha, S., Phys. Rev. B 47, 9435–9448 (1993).10.1103/PhysRevB.47.9435Google Scholar
43 Schiff, E. A., J. Phys: Condens. Matter 16, S5265–S5275 (2004).Google Scholar
44 Yablonovitch, E., Cody, G. D., IEEE Transactions on Electron Devices ED-29, 300–305 (1982).10.1109/T-ED.1982.20700Google Scholar
45 Tiedje, T., Yablonovitch, E., Cody, G. D., Brooks, B. G., IEEE Transactions on Electron Devices ED-31, 711–716 (1984).10.1109/T-ED.1984.21594Google Scholar
46 Cody, G. D., Tiedje, T., in Energy and the Environment Abeles, B., Jacobson, A. J., Sheng, P., Eds. (World Scientific, Singapore, 1992) pp. 147–213.Google Scholar
47 Wronski, C. R., in Hydrogenated Amorphous Silicon, Volume 21C: Electronic and Transport Properties Pankove, J. I., Ed. (Academic Press, Orlando, 1984) pp. 347–374.10.1016/S0080-8784(08)63074-4Google Scholar
48 Wronski, C. R., MRS Symp. Proc.: Amorphous and Microcrystalline Silicon Technology-1997, Vol. 467, Schiff, E., Hack, M., Wagner, S., Schropp, R., Eds., MRS Spring, 1997, San Francisco (MRS, 1997).Google Scholar
49 Surek, T., Progress in U. S. Photovoltaics: Looking Back 30 Years and Looking Ahead 20, 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan (May 11-18, 2003).Google Scholar