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A Universal Thermal Module™ for Clusterable RTP and MOCVD Applications

Published online by Cambridge University Press:  15 February 2011

Mehrdad M. Moslehi ,
Tom Omstead ,
Yong Jin Lee ,
Ahmad Kermani ,
Lino Velo  and
Charles Schaper
Mehrdad M. Moslehi
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
Tom Omstead
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
Yong Jin Lee
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
Ahmad Kermani
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
Lino Velo
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
Charles Schaper
Affiliation:
CVC Products, Inc., 525 Lee Road, P.O. Box 1886, Rochester, NY 14603-1886
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Abstract

A Universal Thermal Module™ (UTM™) has been developed for vacuum-integrated cluster RTP and MOCVD as well as stand-alone atmospheric RTP applications. The UTM™ architecture provides highly modular RTP and MOCVD tool configurations for various single-wafer thermal processes. The UTM™ design comprises a temperature-controlled UHV-grade process chamber as well as an ultraclean gearless wafer rotation assembly for improved temperature uniformity and enhanced built-in reliability. The UTM™ RTP employs bottom/backside wafer heating using a multi-zone axisymmetric illuminator and a reflective multi-zone gas showerhead located above the wafer. Precision RTP control is achieved using a multi-zone controller in conjunction with a multipoint sensor system with real-time multi-zone compensations for wafer emissivity and illuminator light interference effects. The RTP temperature measurement and control techniques fully compensate for any axisymmetric or non-axisymmetric wafer emissivity patterns, eliminating the need for pre-RTP wafer backside conditioning. The UTM™ showerhead provides capabilities for ultraclean multi-zone gas injection and in-situ RF plasma for MOCVD and RTCVD processes. The UTM™ MOCVD module meets the most stringent specifications and tool parameters for various metallization and high-K dielectric deposition applications. This module has been used for deposition of low-resistivity copper films with excellent void-free sub-half-micron gap fill for high-performance multilevel interconnects. The UTM™ RTP and MOCVD modules have been implemented based on design optimizations in a virtual reactor environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 159
Copyright
Copyright © Materials Research Society 1995

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References

1. Moslehi, M., Paranjpe, A., Velo, L., and Kuehne, J., Solid State Technol., 37, (May 1994).Google Scholar
2. Saraswat, K., Apte, P., Booth, L., Chen, Y., Dankoski, P., Degertekin, F. Levent, Franklin, G., Khuri-Yakub, B., Moslehi, M., Schaper, C., Gyugyi, P., Lee, Y., Pei, J., and Wood, S., IEEE Trans. on Semiconductor Manufacturing, 7, 159, 1994.Google Scholar
3. Moslehi, M., Velo, L., Paranjpe, A., Kuehne, J., Huang, S., Chapman, R., Schaper, C., Breedijk, T., Najm, H., Yin, D., Lee, Y., Anderson, D., and Davis, C., Microelectronics Engineering (Elsevier Science B.V.) 25, 93 (1994).Google Scholar
4. Spence, P., Schaper, C., and Kermani, A., presented at the 1995 MRS Spring Meeting, San Francisco, CA, 1995 (to be published in this proceeding volume).Google Scholar