Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-21T06:23:31.007Z Has data issue: false hasContentIssue false
  • English
  • Français

Unique Features of Laser Ablation

Published online by Cambridge University Press:  01 January 1992

Mitsugu Hanabusa
Mitsugu Hanabusa*
Affiliation:
Toyohashi University of Technology, Department of Electrical and Electronic Engineering, Tenpaku, Toyohashi 441, Japan
Get access

Abstract

The advantage and disadvantage of laser ablation as a thin Film deposition technique are discussed on the basis of my own experiences. High instantaneous growth rate is useful to produce amorphous films, and reactive deposition can be achieved by gases introduced in the deposition chamber. Combining these two features, hydrogenated amorphous silicon films were produced. Laser ablation is characterized by the presence of energetic neutrals and ions in beams, which helped to deposit diamond-like carbon films. Also selective-area deposition is made possible by placing a mask between the target and substrate. In pulsed laser ablation the mask must be placed close to the substrate to avoid the spreading of deposits. The thickness profilr can bc controlled by residual gas pressure, and using this technique microlenses were fabricated, in addition to ridge-type optical waveguides. The particle problem which plagues laser ablation is more serious for targets with low fractional ionic character. The usefulness of a molten target as the means to eliminate particles was confirmed for aluminum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 447
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.For instance, Hanabusa, M., Mater. Sci. Rep. 2, 51 (1987).Google Scholar
2. Ehrlich, D.J. and Tsao, J.Y. (eds.), Laser Micro-fabrication, Academic Press, Boston, MA, 1989.Google Scholar
3. Herman, I.P., Chem. Rev. 89, 1323 (1989).Google Scholar
4. Hanabusa, M., Thin Solid Films 218, 144 (1992).Google Scholar
5. Cheung, J.T. and Sankur, H., CRC Critical Reviews in Solid State and Materials Sciences, 15(1), 63 (1988).Google Scholar
6. Hubler, G.K., MRS Bulletin XM (2), 26 (1992); Cheung, J. and Horwitz, J., MRS Bulletin XM (2), 30; D.B. Chrisey and A. Inam, MRS Bulletin XM (2), 37; C.M. Cotell and K.S. Trabowski, MRS Bulletin XM (2), 44; T. Venkatesan, X.D. Wu, R. Muenchausen, and A. Pique, MRS Bulletin XM (2), 54.Google Scholar
7. Bäuerle, D., Luk' yanchuk, B., Wang, X.Z., and Arenholz, E., in Laser Ablation of Electronic Materials, edited by Fogarassy, E. and Lazare, S. (Flsevier Science Publishers, New York, 1992), p. 39.Google Scholar
8. Dieleman, J., van de Riet, E., and Kools, J.C.S., Jpn. J. Appl. Phys. 31, 1964 (1992).Google Scholar
9. Hanabusa, M., Suzuki, M., and Nishigaki, S., Appl. Phys. Lett. 38, 385 (1981).Google Scholar
10. Hanabusa, M. and Suzuki, M. in Laser and Electron-Beam Interactions with Solids, edited by Appleton, B.R. and Celler, G.K. (Mater. Res. Soc. Proc. 4, Pittsburgh, PA, 1982) p. 559.Google Scholar
11. Hanabusa, M., Moriyama, S., and Kikuchi, H., Thin Solid Films 107, 227 (1983).Google Scholar
12. Hanabusa, M. and Suzuki, M., Appl. Phys. Lett. 39, 431 (1981).Google Scholar
13. Fujimori, S. and Nagai, K., Jpn. J. Appl. Phys. 20, L194 (1981).Google Scholar
14. Miyazawa, T., Misawa, S., Yoshida, S., and Gonda, S., J. Appl. Phys. 55, 188 (1984).Google Scholar
15. Sato, T., Furuno, S., Iguchi, S., and Hanabusa, M., Jpn. J. Appl. Phys. 26, L1487 (1987); Appl. Phys. A45, 355 (1988).Google Scholar
16. Marquardt, C.L., Williams, R.T., and Nagel, D.J. in Plasma Synthesis and Etching of Electronic Materials, edited by Chuang, R.P.H. and Abeles, B. (Mater. Res. Soc. Proc. 38, Pittsburgh, PA, 1985) p. 325.Google Scholar
17. Davanloo, F., Juengerman, E.M., Jander, D.R., Lee, T.J., and Collins, C.B., J. Mater. Res. 5, 2398 (1990).Google Scholar
18. Pappas, D.L., Saenger, K.L., Bruley, J., Krakow, W., Cuomo, J.J., Gu, T., and Collins, R.W., J. Appl, Phys. 71, 5675 (1992).Google Scholar
19. Wagal, S.S., Juengerman, E.M., and Collins, C.B., Appl. Phys. Lett. 53, 187 (1988).Google Scholar
20. Krishnaswamy, J., Rengan, A., Narayan, J., Vedam, K., and McHargue, C.J., Appl. Phys. Lett. 54, 2455 (1989).Google Scholar
21. Suda, H. and Hanabusa, M., Appl. Opt. 31, 5388 (1992).Google Scholar
22. Kobayashi, M., Master Thesis, Toyohashi University of Technology, to be completed in Feb. 1993.Google Scholar
23. Singh, R.K., Bhattacharya, D., and Narayan, J., Appl. Phys. Lett. 61, 483 (1992).Google Scholar
24. Sankur, H., Gunning, W.J., DeNatale, J., and Flintoff, J.F., J. Appl. Phys. 65, 2475 (1989).Google Scholar